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Electron Paramagnetic Resonance of Intrinsic Defects in III-V Semiconductors
Published online by Cambridge University Press: 28 February 2011
Abstract
The use of electron paramagnetic resonance to investigate intrinsic defects in the III-V semiconductors is reviewed. Particular attention is given to lattice vacancies, antisites and their complexes in GaP, GaAs, and InP. The role of EPR in arriving at an understanding of these defects is emphasized and the interplay between experiment and theory is discussed.
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- Copyright © Materials Research Society 1985
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