Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-25T17:42:00.732Z Has data issue: false hasContentIssue false
  • English
  • Français

Electromigration in Al And Al-Alloy Thin-Film Conductors

Published online by Cambridge University Press:  22 February 2011

R.W. Pasco ,
L.E. Felton  and
J.A. Schwarz
R.W. Pasco
Affiliation:
International Business Machines Corporation, Hopewell Junction, NY 12533
L.E. Felton
Affiliation:
Syracuse University, Dept. Chem. Eng. & Mat'1. Sci., Syracuse, NY 13210
J.A. Schwarz
Affiliation:
Syracuse University, Dept. Chem. Eng. & Mat'1. Sci., Syracuse, NY 13210
Get access

Abstract

Temperature-ramp Resistance Analysis to Characterize Electromigration (TRACE) has been applied to thin-film Al and Al-alloy conductors. Results have yielded activation energies in agreement with literature values. The TRACE technique has been used to determine the effect of H2 on the kinetics of electromigration damage (EMD) for both Al and Al-2%Cu thin-film conductors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 581
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Pasco, R.W. and Schwarz, J.A., Solid-State Electronics, 26, 445–452 (1983).Google Scholar
2. Pasco, R.W. and Schwarz, J.A., Proc. IEEE International Reliability Physics Symposium, 10–23 (1983).Google Scholar
3. Shih, D.-Y. and Ficalora, P.J., Proc. IEEE International Rel. Phys. Sympos., 268–272 (1978).Google Scholar
4. Shih, D.-Y. and Ficalora, P.J., Proc. IEEE International Rel. Phys. Sympos., 87–90 (1979).Google Scholar
5. Meyer, D.E., J. Vac. Sci. Technol., 17, 322–326 (1980).Google Scholar
6. Murthi, A. and Shewchun, J., Proc. IEEE International Rel. Phys. Sympos., 55–65 (1982).Google Scholar
7. Sardo, G.M., Masters Thesis, Dept. Chem. Eng. & Mat'1. Sci., Syracuse University, Syracuse, NY (1981).Google Scholar
8. Schreiber, H.-U., Solid-State Electronics, 24 583–589 (1981).Google Scholar
9. Pasco, R.W., Felton, L.E. and Schwarz, J.A., Solid-State Electronics, 26, in press (1983).Google Scholar
10. Thomas, R. and Lane, C., personal communication at Rome Air Development Center, Griffiss A.F.B., Rome, NY (1982).Google Scholar
11. Davis, T.L., J. Appl. Phys., 38, 3756–3760 (1967).Google Scholar
12. Hummel, R.E. and Huntington, H.B., eds., Electro- and Thermo-Transport in Metals and Alloys, TMS-AIME, New York (1977),Google Scholar
see Ho, P.-S., d'Heurle, F.M. and Gangulee, A., pp. 108–159.Google Scholar
13. Blackburn, D.A., Ref. 12, 33–34.CrossRefGoogle Scholar
14. Meyer, D.E., Trans. TMS-AIME, 245, 593–599 (1969).Google Scholar
15. DeSorbo, W. and Turnbull, D., Acta Metall., 7, 83 (1959).Google Scholar
16. DeSorbo, W. and Turnbull, D., Phys. Rev., 115, 560 (1959).CrossRefGoogle Scholar