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Electromigration Failure of Narrow Al Alloy Conductors Containing Stress - Voids

Published online by Cambridge University Press:  22 February 2011

A. S. Oates  and
J. R. Lloyd
A. S. Oates
Affiliation:
AT&T Bell Laboratories, 555 Union Blvd., Allentown, PA 18103
J. R. Lloyd
Affiliation:
Digital Equipment Corporation, 77 Reed Road, Hudson, MA 01749
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Abstract

Electromigration and stress - induced voiding are two of the most important metallization failure mechanisms for integrated circuits. These mechanisms are not independent since stress voiding may affect electromigration. In this paper we examine the impact of stress voiding on electromigration failure of narrow Al alloy stripes, and show that the major effects of stress voiding are significant reductions in failure times, and a non-Arrenhius temperature dependence of the lifetime. We propose a model to explain these effects based on the formation of flux divergences at pre-existing voids due to stress gradients.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 269
Copyright
Copyright © Materials Research Society 1994

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References

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