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Electroluminescent Oxide Phosphor Thin Films Prepared by a Sol-gel Process

Published online by Cambridge University Press:  14 March 2011

Tadatsugu Minami ,
Toshihiro Miyata ,
Tetsuya Shirai  and
Toshikuni Nakatani
Tadatsugu Minami
Affiliation:
Electron Device System Laboratory, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan
Toshihiro Miyata
Affiliation:
Electron Device System Laboratory, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan
Tetsuya Shirai
Affiliation:
Electron Device System Laboratory, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan
Toshikuni Nakatani
Affiliation:
Electron Device System Laboratory, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501, Japan
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Abstract

Ga2O3:Mn and (Ga2O3-SnO2):Eu thin films have been prepared by a sol-gel process. High luminance emissions were obtained in TFEL devices: green using a Ga2O3:Mn and red using a Ga2O3:Eu or a SnO2:Eu thin-film emitting layer. These sol-gel prepared devices were produced without using any vacuum processes and always exhibited higher luminances than equivalent devices prepared by r.f. magnetron sputtering: 40, 309 and above 1000 cd/m2 using SnO2:Eu, Ga2O3:Eu and Ga2O3:Mn phosphor thin films, respectively, in TFEL devices prepared by the sol-gel process and driven at 1kHz.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 621: Symposia Q/R – Electron-Emissive Materials, Vacuum Microelectronics… , 2000 , Q4.3.1
Copyright
Copyright © Materials Research Society 2000

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References

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