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Electroluminescence as a Function of Electric Field and Temperature in Amorphous Silicon-Carbon Based p-i-n Structures

Published online by Cambridge University Press:  28 February 2011

A. B. Pevtsov ,
A. G. Pilatov ,
N. A. Feoktistov ,
A. V. Zherzdev ,
S. M. Karabanov ,
T. Muschik ,
D. Zrenner  and
R. Schwarz
A. B. Pevtsov
Affiliation:
Ioffe Physical-Technical Institute, St. Petersburg, Russia
A. G. Pilatov
Affiliation:
Ioffe Physical-Technical Institute, St. Petersburg, Russia
N. A. Feoktistov
Affiliation:
Ioffe Physical-Technical Institute, St. Petersburg, Russia
A. V. Zherzdev
Affiliation:
Ioffe Physical-Technical Institute, St. Petersburg, Russia
S. M. Karabanov
Affiliation:
Ioffe Physical-Technical Institute, St. Petersburg, Russia
T. Muschik
Affiliation:
Technical University of Munich, Physics Department E16, W-8046 Garching, Germany.
D. Zrenner
Affiliation:
Ioffe Physical-Technical Institute, St. Petersburg, Russia
R. Schwarz
Affiliation:
Technical University of Munich, Physics Department E16, W-8046 Garching, Germany.
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Abstract

Electroluminescence at room temperature with a peak energy between 1.6 and 1.8 eV is observed in a-SiC:H p-i-n devices containing thin injection layers of high bandgap a-SiC:H. The temperature dependence of electroluminescence between 80 K and 320 K is much weaker than expected from the photoluminescence signal. No shift of the electroluminescence spectrum is observed up to voltages of 20 V applied across a 110 nm thick device. The results are compared to well-known features of electroluminescence in a-Si:H devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 597
Copyright
Copyright © Materials Research Society 1993

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