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Electrical Properties of Hard Carbon Films

Published online by Cambridge University Press:  25 February 2011

Walter Varhue ,
Kiril Pandelisev  and
Brian Shinseki
Walter Varhue
Affiliation:
Dept. of Electrical Eng., University of Vermont, Burlington, VT 05405
Kiril Pandelisev
Affiliation:
Cominco Ltd./P.O. Box 3000, Trail, British Columbia, Canada VIR 455
Brian Shinseki
Affiliation:
Intel Corporation, Chandler, AZ
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Abstract

The electrical resistivity, optical band gap and activation energy for electrical conduction have been determined as a function of preparation conditions. The operating conditions for the glow discharge reactor have been interpreted in terms of ion energy and reactive species production. The change in the electrical properties could not be explained as a percentage of [SP3] versus [SP2] bonding ratio. Rather, these two species are embedded in an amorphous medium which determines the materials electrical properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 605
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. See “The New York Times,” Science Section, Tuesday, Oct. 25, 1988.Google Scholar
2. Angus, J.C., Koidl, P. and Domitz, S., in Plasma Deposited Thin Films, edited by Mort, J. and Jansen, F. (CRC, Boca Raton, 1986), p. 89.Google Scholar
3. Brédas, J.L. and Street, G.B., J. Phys. C 18, L651 (1985).Google Scholar
4. Robertson, J. and O'Reilly, E.P., Phys. Rev. B 35, 2946 (1987).Google Scholar
5. Fink, J., Muller-Heinzerling, T., Scheerer, B., Dischler, B., Koidl, P., Bubenzer, A., and Sah, R.E., Phys. Rev. B 30 4713 (1984).Google Scholar
6. Varhue, W. J., Krause, S. and Dea, J. and Jung, C.O. in Clemical Perspectives of Microelectronic Materials, edited by Gross, M.E., Jasinski, J., and Yates, J.T., Jr. (Mater, Res. Soc. Proc. 131, Boston, MA 1988).Google Scholar
7. Dischler, B., Bubenzer, A. and Koidl, P., Solid State Communications Vol.48, No. 2, 105 (1983).Google Scholar