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Electrical Characteristics of the Pt/SBT/TiO2/Si MFIS Structures with Thickness Variation of the SBT Film

Published online by Cambridge University Press:  21 March 2011

Ji-Woong Kim ,
Kwang-Yong Lee ,
Jae-Hoon Choi  and
Tae-Sung Oh
Ji-Woong Kim
Affiliation:
Department of Metallurgical Engineering and Materials Science, Hong Ik University, Seoul 121-791, Korea
Kwang-Yong Lee
Affiliation:
Department of Metallurgical Engineering and Materials Science, Hong Ik University, Seoul 121-791, Korea
Jae-Hoon Choi
Affiliation:
Department of Metallurgical Engineering and Materials Science, Hong Ik University, Seoul 121-791, Korea
Tae-Sung Oh
Affiliation:
Department of Metallurgical Engineering and Materials Science, Hong Ik University, Seoul 121-791, Korea
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Abstract

Pt/Sr0.85Bi2.4Ta2O9/TiO2/Si structures were prepared with variation of the Sr0.85Bi2.4Ta2O9 (SBT) film thickness for MFIS-FET applications. After depositing TiO2 film of 10 nm thickness by reactive sputtering on Si(100) substrate as a buffer layer, SBT thin film of 210-400 nm thickness was prepared onto it by metal organic decomposition process. Regardless of the SBT film thickness, the Pt/SBT/TiO2/Si structures exhibited clockwise directional hysteresis, indicating well-defined ferroelectric switching behavior of the SBT films. While the memory window of the Pt/SBT/TiO2/Si MFIS structures increased with increasing the SBT film thickness, the maximum capacitance of the Pt/SBT/TiO2/Si MFIS structures decreased with increasing the SBT film thickness. The Pt/SBT(400 nm)/TiO2(10 nm)/Si structure exhibited a memory window of 1.3 V at ±5 V.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 666: Symposium F – Transport and Microstructural Phenomena , 2001 , F3.1
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

[1] Scott, J. F. and Araujo, C. A. Paz de, Science 246, 1400 (1989).Google Scholar
[2] Araujo, C. A., Cuchiaro, J. D., McMillan, L. D., Scott, M. C. and Scott, J. F., Nature 374, 627(1995)Google Scholar
[3] Vascankumar, C. V. R., Pascual, R. and Sayer, M., J. Appl. Phys. 71, 864 (1992)Google Scholar
[4] Nagashima, K., Hirai, T., Koike, H., Fujisaki, Y. and Tarui, Y., Jpn. J. Appl. Phys. 35, 1680 (1996).Google Scholar
[5] Fujimori, Y., Izumi, N., Nakamura, T. and Kamisawa, A., IEICE TRANS. ELECTRON. E81, NO.4 (1998).Google Scholar
[6] Kanashima, T. and Okuyama, M., Jpn. J. Appl. Phys. 38, 2044 (1999).Google Scholar
[7] Senzaki, J., Kurihara, K., Nomura, N. and Mitsunaga, O., Jpn. J. Appl. Phys. 37, 5150 (1998).Google Scholar
[8] Tahan, D. M., Safari, A. and Klein, L. C., J. Am. Ceram. Soc. 79, 1594 (1996)Google Scholar
[9] Desu, S. B., Peng, C. H., Kamnerdiana, I. and Schnele, P. J., Mat. Res. Soc. Symp. Proc. 200, 319 (1990)Google Scholar
[10] Zhu, J., Zhang, X., Zhu, Y. and Desu, S. B., J. Appl. Phys. 83, 1610 (1998)Google Scholar