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Electrical and Optical Characteristics of Isoelectronic Al-doped GaN Films Grown by Metal Organic Chemical Vapor Deposition

Published online by Cambridge University Press:  01 February 2011

Jae-Hoon Lee ,
Jong-Hyun Kim ,
Hyun-Min Ko ,
Sung-Bum Bae ,
Kyu-Suk Lee ,
Yong-Hoon Cho ,
Sung-Ho Hahm ,
Yong-Hyun Lee  and
Jung-Hee Lee
Jae-Hoon Lee
Affiliation:
School of Electronic Engineering & Computer Science, Kyungpook National University, Daegu, 702-701, Korea
Jong-Hyun Kim
Affiliation:
School of Electronic Engineering & Computer Science, Kyungpook National University, Daegu, 702-701, Korea
Hyun-Min Ko
Affiliation:
School of Electronic Engineering & Computer Science, Kyungpook National University, Daegu, 702-701, Korea
Sung-Bum Bae
Affiliation:
Telecommunication Basic Research Laboratory, Electronics and Telecommunications Research Institute, Taejon 305-350, Korea
Kyu-Suk Lee
Affiliation:
Telecommunication Basic Research Laboratory, Electronics and Telecommunications Research Institute, Taejon 305-350, Korea
Yong-Hoon Cho
Affiliation:
Department of Physics, Chungbuk National University, Cheongju 361-763, Korea
Sung-Ho Hahm
Affiliation:
School of Electronic Engineering & Computer Science, Kyungpook National University, Daegu, 702-701, Korea
Yong-Hyun Lee
Affiliation:
School of Electronic Engineering & Computer Science, Kyungpook National University, Daegu, 702-701, Korea
Jung-Hee Lee
Affiliation:
School of Electronic Engineering & Computer Science, Kyungpook National University, Daegu, 702-701, Korea
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Abstract

The effects of the isoelectronic Al-doping of GaN grown by metal organic chemical vapor deposition were investigated for the first time using scanning electron microscopy (SEM), Hall measurements, photoluminescence (PL), and time-resolved PL. When a certain amount of Al was incorporated into the GaN films, the room temperature photoluminescence intensity of the films was approximately two orders larger than that of the undoped GaN. More importantly, the electron mobility significantly increased from 130 for the undoped sample to 500 cm2/Vs for the sample grown at a TMAl flow rate of 10 νmol/min, while the unintentional background concentration only increased slightly relative to the TMAl flow. The incorporation of Al as an isoelectronic dopant into GaN was easy during MOCVD growth and significantly improved the optical and electrical properties of the film. This was believed to result from a reduction in the dislocation-related non-radiative recombination centers or certain other defects due to the isoelectronic Al-doping.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 722: Symposia K/L – Materials and Devices for Optoelectronics and Photonics – Photonic Crystals-From Materials to Devices , 2002 , K3.5
Copyright
Copyright © Materials Research Society 2002

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