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Electrical and Material Evaluation of the MOCVD TiN as Metal Gate Electrode for Advanced CMOS Technology

Published online by Cambridge University Press:  01 February 2011

Raghunath Singanamalla ,
Judit Lisoni ,
Isabelle Ferain ,
Olivier Richard ,
Laure Carbonell ,
Tom Schram ,
HongYu Yu ,
Stefan Kubicek ,
Stefan de Gendt  and
Malgorzata Jurczak
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Raghunath Singanamalla
Affiliation:
[email protected], IMEC, CMOSDR, KAPELDREEF 75,, LEUVEN, N/A, 3001, Belgium, +3216288190, +3216281706
Judit Lisoni
Affiliation:
[email protected], IMEC, Leuven, N/A, 3001, Belgium
Isabelle Ferain
Affiliation:
[email protected], IMEC, Leuven, N/A, 3001, Belgium
Olivier Richard
Affiliation:
[email protected], IMEC, Leuven, N/A, 3001, Belgium
Laure Carbonell
Affiliation:
[email protected], IMEC, Leuven, N/A, 3001, Belgium
Tom Schram
Affiliation:
[email protected], IMEC, Leuven, N/A, 3001, Belgium
HongYu Yu
Affiliation:
[email protected], IMEC, Leuven, N/A, 3001, Belgium
Stefan Kubicek
Affiliation:
[email protected], IMEC, Leuven, N/A, 3001, Belgium
Stefan de Gendt
Affiliation:
[email protected], IMEC, Leuven, N/A, 3001, Belgium
Malgorzata Jurczak
Affiliation:
[email protected], IMEC, Leuven, N/A, 3001, Belgium
Kristin de Meyer
Affiliation:
[email protected], IMEC, Leuven, N/A, 3001, Belgium
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Abstract

The electrical and material characterization of Ti(C)N deposited by metal organic chemical vapor deposition (MOCVD) technique, as metal gate electrode for advanced CMOS technology is investigated. The effects of the plasma treatment, post anneal treatment and the thickness variation of the Ti(C)N film on the flat band voltage (VFB) and effective work function (WF) of the Poly-Si/Ti(C)N/SiO2 Poly-Si/Ti(C)N/SiO2 gate stack s are reported. We found that both the in-situ plasma treatment and post anneal treatment help in reducing the carbon content (organic) in the film making it more metallic compared to the as-deposited films. However, the post anneal treatment was found to be a better option for getting rid of hydrocarbons as compared to plasma treatment from the gate dielectric integrity point of view. The thickness variation of post annealed Ti(C)N film ranged from 2.5 nm to 10 nm lead to WF shift of upto ~350 mV for both Poly-Si/Ti(C)N/SiO2 and Poly-Si/Ti(C)N/HfO2 gate stacks.

Keywords

chemical vapor deposition (CVD) (deposition)diffusionTi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 917: Symposium E – Gate Stack Scaling – Materials Selection, Role of Interfaces, and Reliability Implications , 2006 , 0917-E12-02
Copyright
Copyright © Materials Research Society 2006

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