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Electrical AFM Measurements for Evaluation of Nitride Erosion in Shallow Trench Isolation Chemical Mechanical Planarization

Published online by Cambridge University Press:  01 February 2011

Yordan Stefanov ,
Tino Ruland  and
Udo Schwalke
Yordan Stefanov
Affiliation:
Institute of Semiconductor Technology, Darmstadt University of Technology, Schlossgartenstr. 8, 64289 Darmstadt, Germany
Tino Ruland
Affiliation:
Institute of Semiconductor Technology, Darmstadt University of Technology, Schlossgartenstr. 8, 64289 Darmstadt, Germany
Udo Schwalke
Affiliation:
Institute of Semiconductor Technology, Darmstadt University of Technology, Schlossgartenstr. 8, 64289 Darmstadt, Germany
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Abstract

This article proposes a new application of tunneling current measurements Atomic Force Microscopy (AFM) for evaluation of silicon nitride stop-layer erosion in Shallow Trench Isolation (STI) Chemical Mechanical Planarization (CMP). Simultaneous topographical and electrical AFM measurements allow a clear identification of ‘open’ silicon surfaces on nanometer scale by enhanced tunneling currents in those areas. The measurement technique is non-destructive and can be successfully implemented for process control.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 838: Symposium O – Scanning Probe and Other Novel Microscopies of Local Phenomena in Nanostructured Materials , 2004 , O10.5
Copyright
Copyright © Materials Research Society 2005

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References

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