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Effect of Stress on the Carrier Contribution to Elastic Constants in Thin Films of Small Gap Compounds

Published online by Cambridge University Press:  15 February 2011

Kamakhya P. Ghatak  and
Sambhu Nath Biswas
Kamakhya P. Ghatak
Affiliation:
Department of Electronics and Telecommunication Engineering, Faculty of Enginering and Technology, Jadavpur University, Calcutta 700032, INDIA.
Sambhu Nath Biswas
Affiliation:
Institute for Habbleitertechnik, RWTH, 5100 Aachen, WSH, Sommerfeld Strasse, Germanmy.
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Abstract

In this paper we have investigated the carrier contribution to elastic constants in very thin films of stressed small gap compounds within the domain of theory. It is found, taking stressed ultrathin films Hg1-xCdxTe and In1-xGaxAsyP1-y lattice matched to InP as examples, that the elastic constants increase with increasing electron concentration and decreasing film thickness respectively in oscillatory manners. Besides the stress enhances the numerical values of such contribution to the elastic constants. In addition, the theoretical formulation is in agreement with the suggested experimental method of determining such constants in materials having arbitary dispersion laws.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 308: Symposium M1 – Thin Films: Stresses and Mechanical Properties IV , 1993 , 445
Copyright
Copyright © Materials Research Society 1993

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