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Effect of Post Plasma Treatment on Reliability and Dielectric Properties of SiOF Films Deposited by ECRCVD With SiF4 and O2

Published online by Cambridge University Press:  15 February 2011

Seoghyeong Lee ,
Jae-Yoon Yoo ,
Kyunghui Oh  and
Jong-Wan Park
Seoghyeong Lee
Affiliation:
Dept. of Metallurgical Engineering, Hanyang University, Seongdong-ku, Seoul 133–791, KOREA, [email protected]
Jae-Yoon Yoo
Affiliation:
Dept. of Metallurgical Engineering, Hanyang University, Seongdong-ku, Seoul 133–791, KOREA, [email protected]
Kyunghui Oh
Affiliation:
Dept. of Metallurgical Engineering, Hanyang University, Seongdong-ku, Seoul 133–791, KOREA, [email protected]
Jong-Wan Park
Affiliation:
Dept. of Metallurgical Engineering, Hanyang University, Seongdong-ku, Seoul 133–791, KOREA, [email protected]
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Abstract

The effect of post plasma treatment on dielectric properties and reliability of fluorine doped silicon oxide (SiOF) films were investigated by measuring their C-V and I-V characteristics, XPS, AFM, and AES. The post plasma treatment of SiOF films was carried out in-situ at 300 °C in the deposition chamber. In this research, when the post plasma treatment time increased, we obtained the following results: (1) The etch rate of SiOF films decreased from 80Å/sec to 10Å/sec. (2) Surface roughness of the plasma treated SiOF films was increased due to the ion bombardment effect of the plasma. (3) The refractive index and relative dielectric constant increased from 1.391 to 1.461 and 3.14 to 3.9, respectively, due to the changes of surface chemistry by the post plasma treatment. (4) The leakage current density of SiOF films prepared by ECRCVD using SiF4 and O2 was less than 1 × 10−9A/cm2. (5) The breakdown field strength increased from 3.5 MV/cm to 8 MV/cm. (6) The thermal stability of the Cu/TiN/SiOF/Si system remained stable up to 600 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 476: Symposium N – Low-Dielectric Constant Materials III , 1997 , 291
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Laxman, Ravi K., Semiconductor International 18(5), 71(1995).Google Scholar
2. Lee, Seoghyeong and Park, Jong-Wan, J. Appl. Phys., 80(9), 5260 (1996).Google Scholar
3. Tamura, T., Inoue, Y., Satoh, M., Yoshitaka, H. and Sakai, J., Jpn. J. Appl. Phys., 35, 2526 (1996).Google Scholar
4. Lee, Peter W., Mzuno, S., Verma, A., Tran, H. and Nguyen, S.V., J. Electrochem. Soc, 143(6), 2015 (1996).Google Scholar
5. Shapiro, M.J., Nguyen, S.V., Matsuda, T. and Dobuzinsky, D., Thin Solid films, 270, 503 (1995).Google Scholar
6. Homma, T., Thin Solid films, 278, 28 (1996).Google Scholar
7. Tamura, T., Inoue, Y., Satoh, M., Yositaka, H. and Sakai, J., Ext. Abst. on the 1996 International Conference onSSDM, 160(1995).Google Scholar
8. Mizuno, S., Verma, A., Lee, P. and Nguyen, B., Thin Solid films, 279, 82 (1996).Google Scholar
9. Katsumata, R., Miyajima, H., Nakasaki, Y. and Hayasaka, N., 1995 Dry Process Symposium, 269 (1995).Google Scholar
10. Pramanik, D., Solid State Technol., 38(9), 69 (1995).Google Scholar
11. Usami, T., Shimokawa, K. and Yoshimaru, M., Jpn. J. Appl. Phys., 33, 408 (1994).Google Scholar
12. Kito, H., Muroyama, M., Sasaki, M., Iwasawa, M., and Kimura, H., Ext. Abst. 27th Conference on SSDM, 160(1995).Google Scholar
13. Chou, Jenq-Shiuh and Lee, Si-Chen, J. Appl. Phys., 77(4), 1805 (1995).Google Scholar
14. Olowolafe, J. O., Li, J., Mayer, J.W. and Cologan, E.G., Appl. Phys. Lett. 58, 469 (1991).Google Scholar
15. Suni, I., Maenpaa, M., Nicolet, M-A. and Luomajavi, M., Solid-State Sci. Tech. 130, 1215, (1983).Google Scholar