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Effect of Phase Transformations on Hardness of Semiconductors

Published online by Cambridge University Press:  10 February 2011

B. A. Galanov ,
O. N. Grigor'ev  and
Y. G. Gogotsi
B. A. Galanov
Affiliation:
Institute for Problems of Materials Science, Kiev, Ukraine
O. N. Grigor'ev
Affiliation:
Institute for Problems of Materials Science, Kiev, Ukraine
Y. G. Gogotsi
Affiliation:
University of Illinois at Chicago, Department of Mechanical Engineering, Chicago, IL [email protected]
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Abstract

Models that describe hardness of materials do not account for stress-induced phase transformations that occur under sharp indenters. However, experimental work shows that some materials can be transformed under the indenter into new, high-pressure phases with properties that differ significantly from those of the pristine material. In particular, semiconductors (Si, Ge and other) experience Herzfeld-Mott transition (metallization). Significant volume changes can accompany these transformations. In the present paper, Tanaka's model [1] has been modified to account for reversible phase transformations under contact loading.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 481: Symposium P – Science and Technology of Semiconductor Surface Preparation , 1997 , 249
Copyright
Copyright © Materials Research Society 1998

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References

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