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Effect of Deposition Condition of Precursor Amorphous Silicon Thin Films on the Behavior of Milc

Published online by Cambridge University Press:  17 March 2011

Y.-G. Yoon ,
G.-B. Kim ,
H.-H Park ,
S.-W Lee  and
S.-K. Joo
Y.-G. Yoon
Affiliation:
School of Materials Science and Engineering, College of Engineering, Seoul National University, Seoul 151-742, Korea, [email protected]
G.-B. Kim
Affiliation:
School of Materials Science and Engineering, College of Engineering, Seoul National University, Seoul 151-742, Korea, [email protected]
H.-H Park
Affiliation:
School of Materials Science and Engineering, College of Engineering, Seoul National University, Seoul 151-742, Korea, [email protected]
S.-W Lee
Affiliation:
School of Materials Science and Engineering, College of Engineering, Seoul National University, Seoul 151-742, Korea, [email protected]
S.-K. Joo
Affiliation:
School of Materials Science and Engineering, College of Engineering, Seoul National University, Seoul 151-742, Korea, [email protected]
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Abstract

We studied on the effect of a deposition condition of precursor a-Si thin films on the shape and micro-structure of MILC. The a-Si thin films were prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD) with silane and hydrogen as a source gas and the deposition temperature was varied from 100 to 400∼. The a-Si films deposited at a lower temperature showed a tendency to (111) crystals and leaving some a-Si residues in MILC region, while those with higher deposition temperature tended to be crystallized to (110). These differences were explained in terms of original hydrogen content and following structural changes by the dehydrogenation during annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 685: Symposium D – Advanced Materials and Devices for Large-Area Electronics , 2001 , D3.3.1
Copyright
Copyright © Materials Research Society 2001

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