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Effect of Base Impurity Concentration on DC Characteristics of Double Ion Implanted 4H-SiC BJTs

Published online by Cambridge University Press:  01 February 2011

Taku Tajima ,
Satoshi Uchiumi ,
Kenta Tsukamoto ,
Kazumasa Takenaka ,
Masataka Satoh  and
Tohru Nakamura
Taku Tajima
Affiliation:
[email protected], Hosei University, EECE and Research Center of Ion Beam Tech., 3-7-2, kajinocho, Koganeishi, Tokyo, 184-8584, Japan
Satoshi Uchiumi
Affiliation:
[email protected], Hosei University, EECE and Research Center of Ion Beam Tech., 3-7-2, Kajinocho, Koganei, Tokyo, 184-8584, Japan
Kenta Tsukamoto
Affiliation:
[email protected], Hosei University, EECE and Research Center of Ion Beam Tech., 3-7-2, Kajinocho, Koganei, Tokyo, 184-8584, Japan
Kazumasa Takenaka
Affiliation:
[email protected], Hosei University, EECE and Research Center of Ion Beam Tech., 3-7-2, Kajinocho, Koganei, Tokyo, 184-8584, Japan
Masataka Satoh
Affiliation:
[email protected], Hosei University, EECE and Research Center of Ion Beam Tech., 3-7-2, Kajinocho, Koganei, Tokyo, 184-8584, Japan
Tohru Nakamura
Affiliation:
[email protected], Hosei University, EECE and Research Center of Ion Beam Tech., 3-7-2, Kajinocho, Koganei, Tokyo, 184-8584, Japan
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Abstract

Double ion implanted 4H-SiC bipolar junction transistors (BJTs) are fabricated by Al and N ion implantation to the base and emitter. The current gain of 3 is obtained at the base Al concentration of 1 × ∼ 1017 /cm3. The collector current as a function of the base Gummel number suggests that double ion implanted 4H-SiC BJT operates in the intrinsic region below the emitter in the low injection level. The high base resistance restricts the base current at VBE as low as 3 V.

Keywords

ion-implantationdevicesalloy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1069: Symposium D – Silicon Carbide 2008—Materials, Processing and Devices , 2008 , 1069-D07-20
Copyright
Copyright © Materials Research Society 2008

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References

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