Hostname: page-component-cd9895bd7-lnqnp Total loading time: 0 Render date: 2024-12-27T00:49:16.387Z Has data issue: false hasContentIssue false
  • English
  • Français

Dose Rate Effects During Damage Accumulation in Silicon

Published online by Cambridge University Press:  15 February 2011

M. -J. Caturla  and
T. Diaz de la Rubia
M. -J. Caturla
Affiliation:
Lawrence Livermore National Laboratory, P.O. Box 808 Livermore, CA-94550
T. Diaz de la Rubia
Affiliation:
Lawrence Livermore National Laboratory, P.O. Box 808 Livermore, CA-94550
Get access

Abstract

We combine molecular dynamics and Monte Carlo simulations to study damage accumulation and dose rate effects during irradiation of Silicon. We obtain the initial stage of the damage produced by heavy and light ions using classical molecular dynamics simulations. While heavy ions like As or Pt induce amorphization by single ion impact, light ions like B only produce point defects or small clusters of defects. The amorphous pockets generated by heavy ions are stable below room temperature and recrystallize at temperatures below the threshold for recrystallization of a planar amorphous-crystalline interface. The damage accumulation during light ion irradiation is simulated using a Monte Carlo model for defect diffusion. In this approach, we study the damage in the lattice as a function of dose and dose rate. A strong reduction in the total number of defects left in the lattice is observed for lower dose rates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 439: Symposium B – Microstructure Evolution During Irradiation , 1996 , 125
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Morehead, F.F. Jr. Crowder, B.L., in Ion Implantation. ed. Ewisen, F.H., Chadderton, L.T. B. Gordon and Breach Science Publishers (1971) p 25 Google Scholar
2. Narayan, J., Oen, O.S., Fathy, D. and Holland, O.W., Materials Letters 3, 67 (1985)Google Scholar
3. Diaz de la Rubia, T., Gilmer, G.H., Phys. Rev. Lett. 74, 2507 (1995)Google Scholar
4. Caturla, M-J, Marques, L. A., Diaz de la Rubia, T. and Gilmer, G.H., Phys. Rev. B (accepted for publication)Google Scholar
5. Swanson, M.L., Parsons, J.R., Hoelke, C. W., Rad. Eff. 9, 249 (1971)Google Scholar
6. Bai, G., Nicolet, M.A., J. Appl. Phys. 70, 6494 (1991)Google Scholar
7. Holland, O.W., Pennycook, S.J.. Albert, G. L., Appl. Phys. Lett. 55, 2503 (1989)Google Scholar
8. Goldberg, R.D., Williams, J.S., Elliman, R.G., Nucl. Instrum. and Meth. B 106, 242 (1995)Google Scholar
9. Cellini, C., Camera, A., Berti, M., Gasparotto, A., Steer, D., Servidori, M., Milita, S., Nucl. Instrum. and Methods B 96, 227 (1995)Google Scholar
10. Holland, O.W., Fathy, D., Narayan, J., Oen, O.J., Rad. Eff. 90, 127 (1985)Google Scholar
11. Tian, S., Yang, S-H, Morris, S., Parab, K., Tasch, F., Jamenitsa, D., Reece, R., Freer, B., Ximonton, R.B., Magee, C., J. Electrochem. Soc. 142, 3215 (1995)Google Scholar
12. Robinson, M.T. and Torrens, I.M., Phys. Rev. B 9, 5008 (1974)Google Scholar
13. Ziegler, J.F., Biersack, J.P., Littmark, U. in The stopping and Range of Ions in Solids, Vol.1 of The Stopping and Range of Ions in Matter, ed. Ziegler, J.F. (Pergamon, New York, 1985) p. 25 ffGoogle Scholar
14. Jaraiz, M., Gilmer, G. H. and Diaz de la Rubia, T., Appl. Phys. Lett. 68, 409 (1996)Google Scholar
15. Stillinger, F.H. and Weber, T.A., Phys. Rev. B 31, 5262 (1985)Google Scholar
16. Lindhard, J. and Sharff, M., Phys. Rev. 124, 128 (1961)Google Scholar
17. Marques, L. A., Caturla, M-J, Gilmer, G.H., Diaz de la Rubia, T., J. Appl. Phys. 80, 6160 (1996)Google Scholar
18. Spaepen, F., Tumbull, D. in Laser Solid Interactions and Laser Processing, ed. Ferris, S.D., Leamy, H.J., Poate, J.M., Mat. Res. Soc., Boston, 1978 Google Scholar
19. Lu, G.-W., Nygren, E., Aziz, M.J., J. Appl. Phys. 70, 5323 (1991)Google Scholar
20. Williams, J.S., Elliman, R.G., Phys. Rev. Lett. 51, 1069 (1983)Google Scholar
21. Priolo, F., Battaglia, A., Nicotra, R., Appl. Phys. Lett. 57, 768 (1990)Google Scholar
22. Foad, M.A., England, J.G., Moffatt, S., Armour, D.G., Proceedeings for the IIT'96 conferenceGoogle Scholar
23. Gilmer, G.H., Diaz de la Rubia, T., Jaraiz, M., Stock, D., Nucl. Instrum. and Methods B102, 247 (1995)Google Scholar
24. Zhu, J., Diaz de la Rubia, T., Yang, L., Mailhiot, C. and Gilmer, G. H., Phys. Rev. B 54, 4741 (1996)Google Scholar