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Dopant Activation During Solid Phase Crystallization of Poly-Si and Influence of Fluorine and Hydrogen
Published online by Cambridge University Press: 15 February 2011
Abstract
Dopant activation for ion implanted solid phase crystallized (SPC) a-Si:H films, deposited by low temperature PECVD, was investigated. The impact of film thickness, the effect of subsequent hydrogenation, and a possible role for fluorine in this process have been studied.
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- Copyright © Materials Research Society 1997
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