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Dislocation-Solute Interactions at Twin Boundaries in Dendritic Web Silicon
Published online by Cambridge University Press: 26 February 2011
Abstract
DLTS, TEM and APFIM techniques have been used to study impurity-defect interactions responsible for reducing minority carrier diffusion lengths in solar cells of dendritic web silicon. Fine scale precipitates of SiOx, which decorate dislocations piled up at the twin planes in low eff clency cells, appear to be the dominant recombination centers.
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- Copyright © Materials Research Society 1987
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