Hostname: page-component-cd9895bd7-lnqnp Total loading time: 0 Render date: 2024-12-27T01:33:46.296Z Has data issue: false hasContentIssue false

Dielectrophoresis-Based Assembly and High-Frequency Characterization of Carbon Nanotube Bundles

Published online by Cambridge University Press:  01 February 2011

Michael Woodson
Affiliation:
[email protected], Duke University, Chemistry, 2246 FFSC, Durham, NC, 27708, United States
Alexander Tselev
Affiliation:
[email protected], Duke University, Department of Chemistry, French Family Science Center,, 124 Science Drive, Durham, NC, 27708, United States
Jie Liu
Affiliation:
[email protected], Duke University, Department of Chemistry, French Family Science Center,, 124 Science Drive, Durham, NC, 27708, United States
Get access

Abstract

As the size of integrated circuit elements decreases, the properties of carbon nanotubes (CNTs) become increasingly attractive for interconnect applications. To be used by industry, full characterization of the electronic properties of CNT aggregates is essential.

Dielectrophoresis from CNTs suspended in liquid has been demonstrated as a simple route to bundles of aligned parallel nanotubes. We describe a method by which circuits including such bundles may be fabricated, and provide some high-frequency measurements of their electrical properties. The contributions of the contacts can be separated from those of the bundle itself.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Steinlesberger, G., Engelhardt, M., Schindler, G. et al., Microelectron. Eng. 64, 409 (2002).Google Scholar
2 Naeemi, A., Sarvari, R., and Meindl, J. D., IEEE Electron Device Lett. 26, 84 (2005).Google Scholar
3 Tang, J., Yang, G., Zhang, Q. et al., Nano Lett. 5, 11 (2005).Google Scholar
4 International Technology Roadmap for Semiconductors, available online at http://public.itrs.netGoogle Scholar
5 Qi, H., Qian, C., and Liu, J., Chem. Mater. 18, 5691 (2006).Google Scholar
6 Kolding, T. E., Proc. 1999 Int. Conf. on Microelectronic Test Structures, 105 (1999).Google Scholar
7 Cho, H. and Burk, D. E., IEEE Trans. Electron Devices 38, 1371 (1991); T. E. Kolding, IEEE Trans. Electron Devices 47, 734 (2000).Google Scholar
8 Anantram, M. P. and Léonard, F., Reports on Progress in Physics 69, 507 (2006).Google Scholar