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Development of AIIBVI Semiconductors Doped with Cr for IRLaser Application

Published online by Cambridge University Press:  21 March 2011

V. A. Kasiyan ,
R. Z. Shneck ,
Z. M. Dashevsky  and
S. R. Rotman
V. A. Kasiyan
Affiliation:
Department of Materials Engineering, P.O.B. 653, Beer-Sheva 84105, Israel
R. Z. Shneck
Affiliation:
Department of Materials Engineering, P.O.B. 653, Beer-Sheva 84105, Israel
Z. M. Dashevsky
Affiliation:
Department of Materials Engineering, P.O.B. 653, Beer-Sheva 84105, Israel
S. R. Rotman
Affiliation:
Department of Electrical Engineering Ben-Gurion University of the Negev, P.O.B. 653, Beer-Sheva 84105, Israel
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Abstract

Electrical and optical measurements obtained with CdSe single crystals doped with chromium from a gas source CrSe over a wide temperature range (500–1050 °C) are compared with ZnSe annealed in liquid metal (Zn). These processes are intended to control the concentrations of the impurity and intrinsic defects. The low temperature annealing of CdSe crystals in CrSe atmosphere allows obtaining high electron mobility up to 9000 cm2/Vs at 80 K and demonstrates the low native defect concentration. A high temperature annealing gives rise to increased electron concentration with decreased mobility. Optical absorption measurements show that at the high annealing temperature effective doping with Cr takes place. The impurity absorption beyond the absorption edge is interpreted by the excitation of Cr++ and Cr+ deep levels

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H9.43.1
Copyright
Copyright © Materials Research Society 2002

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