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Detailed C-V Analysis for YbMnO3/Y2O3/Si Structure

Published online by Cambridge University Press:  10 February 2011

Takeshi Yoshimura ,
Norifumi Fujimura ,
Daisuke Ito  and
Taichiro Ito
Takeshi Yoshimura
Affiliation:
Department of Applied Materials Science, College of Engineering, Osaka Prefecture University, 1–1 Gakuen-cho, Sakai, Osaka 599–8531, Japan
Norifumi Fujimura
Affiliation:
Department of Applied Materials Science, College of Engineering, Osaka Prefecture University, 1–1 Gakuen-cho, Sakai, Osaka 599–8531, Japan, [email protected]
Daisuke Ito
Affiliation:
Department of Applied Materials Science, College of Engineering, Osaka Prefecture University, 1–1 Gakuen-cho, Sakai, Osaka 599–8531, Japan
Taichiro Ito
Affiliation:
Department of Applied Materials Science, College of Engineering, Osaka Prefecture University, 1–1 Gakuen-cho, Sakai, Osaka 599–8531, Japan
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Abstract

YbMnO3 (Yb/Mn = 0.96) thin films were prepared on Y2O3(111)/Si(111). Although the sample exhibited ferroelectric type C-V hysteresis, the window width changed depending on the applied bias voltage. Hence, the ferroelectric type hysteresis might include the effect of space charge. To make clear the C-V behavior caused by only ferroelectricity, and to obtain the optimal relationship between ferroelectric and insulator layer thicknesses, the C-V behavior at high frequency was computed for MFIS structure. Relationships between the counter bias voltage applied to the ferroelectric layer and the thickness of dielectric layer were also demonstrated. Compared with the calculated results, experimental C-V characteristics are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 574: Symposia BB – Multicomponent Oxide Films for Electronics , 1999 , 359
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

[1] Scott, J. F. and Araujo, C. A. Paz de: Science 246 (1989) 1400 10.1126/science.246.4936.1400Google Scholar
[2] C. A. Paz de Araujo, Cuchiaro, J. D., McMillan, L. D., Scott, M. C. and Scott, J. F.: Nature 374 (1995) 627 Google Scholar
[3] Moll, J. L. and Tarui, Y., IEEE trans. Elect. Dev., ED–10, (1963) 338 10.1109/T-ED.1963.15245Google Scholar
[4] Sugibuchi, K., Kurogi, Y. and Endo, N., J. Appl. Phys. 46 (1975) 2877 10.1063/1.322014Google Scholar
[5] Shichi, Y., Tanimoto, S., Goto, T., Kuroiwa, K. and Tarui, Y., Jpn. J. Appl. Phys. 33 (1994) 5172 10.1143/JJAP.33.5172Google Scholar
[6] Oishi, Y., Matsumuro, Y. and Okuyama, M., Jpn. J. Appl. Phys. 36 (1997) 5896 10.1143/JJAP.36.5896Google Scholar
[7] Hirai, T., Teramoto, K., Nishi, T., Goto, T. and Tarui, Y., Jpn. J. Appl. Phys. 33 (1994) 5219 10.1143/JJAP.33.5219Google Scholar
[8] Sakai, I., Tokumitu, E. and Ishiwara, H., Jpn. J. Appl. Phys., 35 (1996) 4987 10.1143/JJAP.35.4987Google Scholar
[9] Kijima, T. and Matsunaga, H., Jpn. J. Appl. Phys., 37 (1998) 5171 10.1143/JJAP.37.5171Google Scholar
[10] Fujimura, N., Azuma, S., Aoki, N., Yoshimura, T. and Ito, T., J. Appl. Phys., 80 (1996) 7084 10.1063/1.363719Google Scholar
[11] Yakel, H. L., Koehler, W. C., Bertaut, E. F. and Forrat, F., Acta Crystalogtr, 16 (1963) 957 10.1107/S0365110X63002589Google Scholar
[12] Ismailzade, I. G. G. and Kizhaev, S. A., Tela, N F. Tver, soviet phys., 7 (1965) 98 Google Scholar
[13] Yoshimura, T., Fujimura, N., Aoki, N., Hokayama, K., Tsukui, S., Kawabata, K. and Ito, T., Jpn. J. Appl. Phys., 36 (1997) 5921 10.1143/JJAP.36.5921Google Scholar
[14] Yoshimura, T., Fujimura, N., Ito, T., Appl. Phys. Lett., 73 (1998) 414 10.1063/1.122269Google Scholar
[15] Shimura, T., Fujimura, N., Yamamori, S., Yoshimura, T., Ito, T., Jpn. J. Appl. Phys., 37 (1998) 5280 10.1143/JJAP.37.5280Google Scholar
[16] Terman, L. M., Solid-State Electronics 5 (1962) 285 Google Scholar
[17] Miller, S. L., Schwank, J. R., Nasby, R. D. and Rodgers, M. S., J. Appl. Phys. 70 (1991) 2848 Google Scholar
[18] Sze, S. M., physics of Semiconductor Devices (wiley, New York, 1981)Google Scholar
[19] Sah, C. T., Tole, A. B. and Pierret, R. F., Solid-State Electronics 12 (1969) 689 10.1016/0038-1101(69)90065-3Google Scholar