Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-25T17:58:12.535Z Has data issue: false hasContentIssue false
  • English
  • Français

Deposition Rate Monitoring using Laser Induced Fluorescence

Published online by Cambridge University Press:  22 February 2011

Timothy C. Reiley ,
Ernesto E. Marinero  and
Harris Notarys
Timothy C. Reiley
Affiliation:
IBM-Almaden Research Center, 650 Harry Road, San Jose, CA 95120
Ernesto E. Marinero
Affiliation:
IBM-Almaden Research Center, 650 Harry Road, San Jose, CA 95120
Harris Notarys
Affiliation:
IBM-Almaden Research Center, 650 Harry Road, San Jose, CA 95120
Get access

Abstract

Ultra thin films (< 10 nm) prepared using sputtering or other deposition techniques are becoming more technologically important, with promise of increased importance in the future, particularly in certain magnetic structures. For example, giant-magnetoresistive structures may incorporate individual layers having a thickness < 1 nm. Such a small thickness is commonly associated with relatively short deposition times (∼10 s) and may place limits on the reproducibility and accuracy of the conventional techniques for in situ thickness monitoring or integrated rate monitoring. Experiments have been performed to use laser induced fluorescence (LIF) as a rate monitoring technique for ultra thin films. An RF diode sputtering system was combined with a YAG-pumped, frequency-doubled dye laser to monitor the deposition rale of copper over a range of conditions. When coupled with an absolute calibration reference, the LIF signal gave a reproducible, well-behaved output over a range of pressure and temperature. The technique is potentially advantageous for depositions where rapid (∼1 s) measurements are needed. LIF is also projected to be a valuable tool for detecting very low deposition rates, and it offers the potential of sensitive, real time, spatially-resolved detection in time regimes extending to the nanosecond regime.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 683
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Baibich, M. N., Broto, J. M., Fert, A., Nguyen Van Dau, F., Petroff, F., Etienne, P., Creuzet, G., Frederick, A. and Chazelas, J., Phys. Rev. Lett. 60, 2472 (1988).Google Scholar
2. Parkin, S. S. P., Bhadra, R. and Roche, K. P., Phys. Rev. Lett. 66, 2152 (1991).Google Scholar
3. Dieney, B., Speriosu, V. S., Metin, S., Parkin, S. S., Gurney, B. A., Baumgart, P. and Wilhoit, D. R., J. Appl. Phys. 69, 4774 (1991).Google Scholar
4. Greene, J. E., Sequeda-Osorio, F. and Natarajan, B. R., J. Appl. Phys. 46, 2701 (1975).Google Scholar
5. Page, R. H., Gudeman, C. S. and Novotny, V. J., J. Appl. Phys. 65, 3586 (1989).Google Scholar
6. Klein, J. D. and Yen, A., J. Appl. Phys. 68, 4879 (1990).Google Scholar
7. Fleddermann, C. B., J. Appl. Phys. 67, 3815 (1990).Google Scholar
8. Eckstein, E. W., Coburn, J. W. and Kay, E., Internat. J. of Mass Spcctrometry and Ion Physics, 17 (1975) 129.Google Scholar
9. Metzger, G., Blair, A. J. and Fleddermann, C. B. in Surface Chemistry and Beam-Solid Interactions, edited by Atwater, H., Houlc, F. and Lowndes, D. (Mater. Res. Soc. Proc. 201, Pittsburgh, PA, 1990) pp. 587–592.Google Scholar
10. Donnell, V. M. in Plasma Processing, ed. by Coburn, J. W., Gottscho, R. A., Hess, D. W. (Mater. Res. Soc. Proc. 68, Pittsburgh, PA, 1986) pp. 95–107.Google Scholar
11. Marinero, E.E. and Jones, C. R., J. Chem. Phys. 82 (1985) 1608.Google Scholar