Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-09T06:12:32.023Z Has data issue: false hasContentIssue false

Deposition Of Znte Thin Films By Close Spaced Sublimation: Structural And Electrical Studies

Published online by Cambridge University Press:  10 February 2011

D. J. Goyal
Affiliation:
EcoSolar Systems (India) Ltd., 117 / A / 2 Pune-Sinhgad Road, Parvati, Pune 411 030, India, [email protected]
P. G. Bilurkar
Affiliation:
EcoSolar Systems (India) Ltd., 117 / A / 2 Pune-Sinhgad Road, Parvati, Pune 411 030, India, [email protected]
S. K. Thorat
Affiliation:
EcoSolar Systems (India) Ltd., 117 / A / 2 Pune-Sinhgad Road, Parvati, Pune 411 030, India, [email protected]
N. V. Mate
Affiliation:
EcoSolar Systems (India) Ltd., 117 / A / 2 Pune-Sinhgad Road, Parvati, Pune 411 030, India, [email protected]
Get access

Abstract

Zinc telluride has the potential of being a low-cost, environmentally stable, lowresistance and easily manufacturable back contact for CdS/CdTe solar cells. Close Spaced Sublimation (CSS) technique is used to deposit thin films of ZnTe. The results are reported in this study.

The effects of substrate temperature and film thickness on the structural properties of the deposited thin films are studied. X-ray diffractograms show that all the films prominently exhibit presence of (111) and (200) orientations. However, the degree of the preferred orientation changes as a function of the film thickness. Increase in film thickness reduces the preferential orientation.

The as deposited ZnTe thin films, being that of p-type semiconductor, are highly resistive. In order to effectively use these as contact to CdS/CdTe solar cells, they are made more conductive by doping copper. The doping is effected by dipping the films in alcoholic solution of copper chloride, followed by air annealing at 200°C. The resistivity of all the doped films drops drastically in the initial 10 minutes of annealing. The extent of doping is controlled by varying the dipping time.

The effects of substrate temperature, film thickness and doping, on the stoichiometry of the films, are studied using Atomic Absorption Spectroscopy (AAS).

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Gessert, Mason, A.R., Reddy, R.C., Matson, R., Coutts, T.J. and Sheldon, P., J. of Electronic Maters. 24, p. 1,443 (1995).Google Scholar
2. Meyers, SERI Report No. SERI/STR–211–3519 (1989).Google Scholar
3. Mondal, McCandless, B.E. and Birkmire, R.W., Solar Energy Maters. & Solar Cells 26, p.181 (1992).Google Scholar
4. Feng, Mao, D., Tang, J., Collins, R.T., and Trefny, J.U., J. of Electronic Maters. 25, p.1,422 (1996).Google Scholar
5. Gessert, Li, X., Coutts, T.J., Mason, A.R., and Matson, R.J., J. Vac. Sci. Technol. A12, p.1,501 (1994).Google Scholar
6. Mao, SERI Report No. SERI/STR–211–3519 (1989).Google Scholar
7. Barret and Massalski, T.B., Structure of Metals, Pergamon, Oxford, 1980, p.204.Google Scholar
8. Niles, D.W., Li, X., Albin, D., Rose, D., Gessert, T.A., and Sheldon, P., Progress in Photovoltaics: Research & Applications 4, p.225 (1996).Google Scholar