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Deposition of Tungsten Films by Pulsed Excimer Laser Ablation Technique

Published online by Cambridge University Press:  22 February 2011

A.M. Dhote  and
S.B. Ogale
A.M. Dhote
Affiliation:
Center for Advanced studies in Materials Science and Solid State Physics, Department of Physics, University of Poona, Pune - 411 007, India
S.B. Ogale
Affiliation:
Center for Advanced studies in Materials Science and Solid State Physics, Department of Physics, University of Poona, Pune - 411 007, India
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Abstract

Low temperature deposition of W on Semiconductor substrates is vital for microelectronics technology. Laser ablation technique using KrF (248 nm) excimer laser has been employed to deposit W films from W(CO)6. The substrates used are Si(100) and SiO2. The influence of substrate temperature on the film growth rate was investigated in a broad temperature range (20 - 500 °C), keeping the laser fluence fixed at 0.4 Jcm−2. The substrate temperature is found to have a strong influence on the resistivity of the deposited films. Film resistivities within a factor of 3 of the value for pure bulk W have been observed in the substrate temperature range of 300 - 500 °C. X-ray diffraction data were also obtained. These revealed that the crystal structure of the film deposited in this temperature range corresponds specifically to the m-phase. Optical emissions from the plasma generated during the pulsed excimer laser ablation of W(CO)6 are also examined by an optical Multichannel Analyser (OMA).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 299
Copyright
Copyright © Materials Research Society 1994

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