Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-04T21:11:13.577Z Has data issue: false hasContentIssue false
  • English
  • Français

Deposition and Treatment of TiO2 as an Alternative for Ultrathin Gate Dielectrics

Published online by Cambridge University Press:  10 February 2011

Yanjun Ma ,
Yoshi Ono  and
Sheng Teng Hsu
Yanjun Ma
Affiliation:
Sharp Laboratories of America, Camas, WA 98607
Yoshi Ono
Affiliation:
Sharp Laboratories of America, Camas, WA 98607
Sheng Teng Hsu
Affiliation:
Sharp Laboratories of America, Camas, WA 98607
Get access

Abstract

We investigated the use of TiO2 as an alternate gate dielectric for future CMOS applications. To reduce the leakage current, different post deposition treatments were investigated. It was found that for very thin TiO2 films, ozone plasma exposure is an effective way in lowering thermal budget of the post deposition annealing. Doping TiO2with Si and/or Al can also be effective in substantially reducing the leakage current. In addition, the doped TiO2 has the desirable property of remaining amorphous even after anneal at 850°C. We also report the fabrication of submicron MOSFETs with TiO2 gate dielectrics equivalent to 2 nm of SiO2 and TiN/Cu gate electrodes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 355
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Campbell, S. A., Gilmer, D. C., Wang, X., Hsieh, M.T., Kim, H.S., Gladfelter, W.L., and Yan, J. H., IEEE Trans. Electron Dev. 44, 104 (1997).10.1109/16.554800Google Scholar
[2] Sun, S.C. and Chen, T.F., Jpn. J. Appl. Phys. 36, 1346 (1997).10.1143/JJAP.36.1346Google Scholar
[3] Guo, X., Ma, T.P., Tamagawa, T., and Halpern, B.L., IEDM Tech. Digest 1998, 377 (1998).Google Scholar
[4] Park, D. et al. , ibid, p381; L. Manchanda, et al, ibid, p605; B. Wu, et al, ibid, p609.Google Scholar
[5] Alers, G.B. et al. , Appl. Phys. Lett. 72, 1308 (1998).10.1063/1.120569Google Scholar
[6] Natori, K., Otani, D., and Sano, N., Appl. Phys. Lett. 73, 632 (1998)10.1063/1.121930Google Scholar
[7] Ma, Y., Evans, D.R., Nguyen, T., Ono, Y., and Hsu, S.T., IEEE Electron Device Letters 20, 254 (1999).10.1109/55.761031Google Scholar