Hostname: page-component-7bb8b95d7b-2h6rp Total loading time: 0 Render date: 2024-09-19T10:20:03.186Z Has data issue: false hasContentIssue false
  • English
  • Français

Dependence of Field-Effect Mobility on Deposition Conditions in a-Si:H TFT

Published online by Cambridge University Press:  16 February 2011

Y. Chida ,
M. Kondo ,
G. Ganguly  and
A. Matsuda
Y. Chida
Affiliation:
Electrotechnical Laboratory, Umezono, Tsukuba-shi, Ibaraki 305, Japan
M. Kondo
Affiliation:
Electrotechnical Laboratory, Umezono, Tsukuba-shi, Ibaraki 305, Japan
G. Ganguly
Affiliation:
Electrotechnical Laboratory, Umezono, Tsukuba-shi, Ibaraki 305, Japan
A. Matsuda
Affiliation:
Electrotechnical Laboratory, Umezono, Tsukuba-shi, Ibaraki 305, Japan
Get access

Abstract

High electron Mobility (over 3 cm2/Vs) thin film transistors (TFTs) have been fabricated using a-Si:H on thermally oxidized crystalline Si substrate. The procedures for fabricating the high performance TFTs are presented and the possible reasons for the high mobility are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 817
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Dean, S. C., Clough, F. J., Milne, W. I. and Powell, M. J., J. Appl. Phys. 73, 2895 (1993).Google Scholar
[2] Ahn, B.-C., Shimizu, K., Satoh, T., Kanoh, H., Sugiura, O., and Matsumura, M., Jpn. J. Appl. Phys. 30, 3695 (1991).Google Scholar
[3] Matsuda, A., J. Non-Cryst. Solids 59/60, 767 (1983).Google Scholar
[4] Ganguly, G. and Matsuda, A., Phys. Rev. B 47, 3661 (1993).Google Scholar