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Density Measurements of Ion Implanted Amorphous Silicon

Published online by Cambridge University Press:  25 February 2011

J. S. Custer ,
Michael O. Thompson ,
D. C. Jacobson ,
J. M. Poate ,
S. Roorda ,
W. C. Sinke  and
F. Spaepen
J. S. Custer
Affiliation:
Dept. of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
Michael O. Thompson
Affiliation:
Dept. of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
D. C. Jacobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. M. Poate
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
S. Roorda
Affiliation:
FOM-Institute for Atomic and Molecular Physics, 1098 SJ Amsterdam, The Netherlands
W. C. Sinke
Affiliation:
FOM-Institute for Atomic and Molecular Physics, 1098 SJ Amsterdam, The Netherlands
F. Spaepen
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
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Abstract

The density of amorphous Si was measured. Continuous and buried amorphous Si films were produced by 0.5-8 MeV Si implantation through a steel contact mask. Surface steps of amorphous Si stripes with initial thicknesses from 0.9 to ∼ 5.0 μm were measured using a surface profilometer. For implants up to 5 MeV, the amorphous Si is constrained laterally by the surrounding crystal and deforms plastically. The density of amorphous Si deduced from the surface step heights is 4.91 × 1022 cm-3, 1.7 ± 0.1 % less than the density of crystal Si (5.00 × 1022 cm-3).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 689
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1 Moss, S. C. and Graczyk, J. F., Phys. Rev. Lett. 23, 1167 (1969).Google Scholar
2 Brodsky, M. H., Kaplaz, D., and Ziegler, J. F., Appl. Phys. Lett. 21, 305 (1972).Google Scholar
3 Spitzer, W. G., Hubler, G. K., and Kennedy, T. A., Nucl. Instr. and Meth. 209/210, 309 (1983).Google Scholar
4 Wooten, F. and Weaire, D., Solid State Physics 40, 1 (1987).Google Scholar
5 Luedtke, W. D. and Landman, Uzi, Phys. Rev. B 40, 1164 (1989).Google Scholar
6 Roorda, S., Poate, J. M., Jacobson, D. C., Eaglesham, D. J., Dennis, B. S., Dierker, S., Sinke, W. C., and Spaepen, F., these proceedings.Google Scholar
7 Ziegler, J. F., He Stopping Powers and Ranges in all Elemental Matter (Pergamon, New York, 1978).Google Scholar
8 Volkert, C. A., these proceedings. Wafer curvature measurements show that the amount of curvature is very small compared with that required for elastic accommodation of the strain. Google Scholar