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Defects at the Interface of GaAsxP1−x/Gap Grown by Vapor Phase Epitaxy

Published online by Cambridge University Press:  25 February 2011

Seiji Takeda ,
M. Hirata ,
H. Fujita ,
T. Sato  and
K. Fujii
Seiji Takeda
Affiliation:
Physics Department, College of General Education, Osaka University, Toyonaka, Osaka 560, Japan
M. Hirata
Affiliation:
Physics Department, College of General Education, Osaka University, Toyonaka, Osaka 560, Japan
H. Fujita
Affiliation:
Research Center, Mitubishi Kasei Co., Ibaraki 300–12, Japan
T. Sato
Affiliation:
Research Center, Mitubishi Kasei Co., Ibaraki 300–12, Japan
K. Fujii
Affiliation:
Mitsubishi Monsanto Chemical Co., Ibaraki 300–12, Japan
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Abstract

Defects and microstructures in a ternary GaAsxP−x compound have been studied by transmission electron microscopy. The compound was grown on a (100) GaP substrate by vapor phase epitaxial. Crystal growth striation contrast was detected in a TEM image. This contrast was explained by local compositional variation of As and P. The distribution of misfit dislocations in the interface region was also studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 367
Copyright
Copyright © Materials Research Society 1989

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