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Defect Identification in Silicon Using Electron Nuclear Double Resonance
Published online by Cambridge University Press: 28 February 2011
Abstract
The application of electron nuclear double resonance (ENDOR) for identification and characterization of point defects in silicon is reviewed. Taking the vacancy and the boron-vacancy complex as examples it is discussed how ENDOR can provide information on the atomic and electronic structure of paramagnetic centers.
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- Copyright © Materials Research Society 1985
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