Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-19T05:34:46.494Z Has data issue: false hasContentIssue false
  • English
  • Français

Deep Level Spectra of Ion-Implantation Defects and Slip Dislocations Introduced by CO2 Laser

Published online by Cambridge University Press:  26 February 2011

X. M. Bao ,
X. Y. Zhang ,
C. E. Liu  and
X. Q. Zheng
X. M. Bao
Affiliation:
Department of Physics, Nanjing University, Nanjing, China
X. Y. Zhang
Affiliation:
Department of Physics, Nanjing University, Nanjing, China
C. E. Liu
Affiliation:
Department of Physics, Nanjing University, Nanjing, China
X. Q. Zheng
Affiliation:
Department of Physics, Nanjing University, Nanjing, China
Get access

Abstract

The CW CO2 laser annealing is an effective method for removing deep level defects induced by ion-implantation. The available laser density range is 350˜600 W/cm2, which is consistent with that needed to fully activate implanted impurities. At high power density (>600W/cm2 ) slip dislocations can be induced. The energy spectra of dislocations were measured with DLTS technique. One peak at Ev + 0.33eV in p-Si and two at peaks at Ec −0.37eV and Ec −0.50eV in n-Si have been found. These peaks are stable during thermal annealing at high temperature. But they can be passivated with hydrogen plasma annealing and reactivated by subsequent thermal annealing in vacuum. The dislocation core is reconstructed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 173
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Kimerling, L. C. and Benton, J. L., Laser and Electron Beam processing of Materials. by White, C. W. and Peercy, P. S., (Academic Press, New York, 1980) p 385.Google Scholar
[2] Nishiyama, K., Arai, M. and Watanabe, N., Jap. J. of Appl. Phys. 19 L563 (1980).Google Scholar
[3] Tsou, S. C., Tsien, P. H., Takai, M., Roschenthaler, D., Ramin, M., Ryssel, H., and Ruge, I., Appl. Phys. 23 163–168 (1980).Google Scholar
[4] Bao, X. M., Zhang, X. Y., Liu, C. E., Chinese Journal of Semiconductors, 1, 11 (1985).Google Scholar
[5] Bao, X. M., Huang, X. F., Guo, H., Zhang, M., Chinese Journal of Semiconductors, 4, 596 (1983).Google Scholar
[6] Seeger, A. and Chik, K. P., Phys. Stat. Sol, 29, 455 (1968).Google Scholar
[7] Shockley, W., Phys. Rev. 91, 228 (1953).Google Scholar
[8] Labusch, R., Schrober, W., 1980, Dislocation in Solids, Vol.5, edited by Nabarro, F. N. R., (Amsterdam, North-Holland, 1980) p 127.Google Scholar
[9] Benton, J. L., Doherty, C. J., Ferris, S. D., Flamm, D. L., Kimerling, L. C. and Leamy, H. J., Appl. Phys. Lett. 36, 670 (1980).Google Scholar
[10] Pohoryles, B., Phys. Stat. Sol. (a) 67, k75 (1981).Google Scholar
[11] Kimerling, L. C., and Patel, J. R., Appl. Phys. Lett. 34, 73 (1979).Google Scholar