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DC-Magnetron Sputtered Silicon Carbide

Published online by Cambridge University Press:  21 February 2011

M. Tenhover
Affiliation:
The Carborundum Company, Niagara Falls, New York, 14302 Technology Division, Bldg. 100
I. B. Ruppel
Affiliation:
The Carborundum Company, Niagara Falls, New York, 14302 Advanced Ceramics Division, Bldg. 89
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Abstract

The preparation and properties of relatively thick films of DC magnetron sputtered SiC films is described. The films were prepared using a new ceramic sputter target material. The new target material is called Hexoloy® SG–90. It is an electrically conductive, dense ceramic material which can be used as a sputter target to yield insulating amorphous SiC thin films on room temperature substrates.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

1. Boecker, W. D. G. and Hailey, L. N., U.S. Patent No. 4,525,461 (25June 1985).Google Scholar
2. Materials Science INC., San Diego California.Google Scholar
3. Argon, A. S., Gupta, V., Landis, H.S., and Cornie, J.A., Journal of Materials Science 24, 1207, (1989).Google Scholar
4. Bagchi, A., Lucas, G.E., Suo, Z., and Evans, A. G., Journal of Materials Research, 9, 1734 (1994).Google Scholar
5. Thornton, J. A., Semiconductor Materials and Process Technology (Noyes, Park Ridge, N.J. 1988).Google Scholar
6. Windischmann, H., Critical Reviews in Solid State and Materials Science, 17(6), 547 (1992).Google Scholar
7. Thornton, J. A. and Hoffman, D .W., Thin Solid Films, 171, 5, (1989)Google Scholar
8. Hutchinson, J. W. and Suo, Z., Advances in Applied Mechanics, 29, 63, (1993).Google Scholar