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Crystallographic Structure of Mesotaxial IrSi3 in Six

Published online by Cambridge University Press:  03 September 2012

H.-J. Hinneberg ,
T. P. Sjoreen  and
M. F. Chisholm
H.-J. Hinneberg
Affiliation:
KFA Jülich, Inst. f. Schicht- und Ionentechnik, Postf 1913, D–52425 Jüulich, Germany
T. P. Sjoreen
Affiliation:
Oak Ridge National Laboratory, Solid State Div., P.O.Box 2008 Oak Ridge, TN 37831
M. F. Chisholm
Affiliation:
Oak Ridge National Laboratory, Solid State Div., P.O.Box 2008 Oak Ridge, TN 37831
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Abstract

A buried epitaxial IrSi3 layer has been produced in (111) oriented Si by high dose Ir+- implantation (1 MeV, 1.7× 1017 Ir+/cm2, 550°C) and subsequent annealing (5 h at 1100°C). Transmission electron microscopy and ion channeling show that the hexagonal IrSi3 prefers to form with its (2110) plane oriented parallel to Si(111). while its [0001] direction is parallel to either [112], [121], or [211]. Thus, the IrSi3 film is made up of three differently oriented crystals, each occupying about 1/3 of the silicide volume.

A dose of 3.5× 1016 1r+/cm2 leads to the formation of a band of large, isolated precipitates. They have the same epitaxial relationship to Si, but the Si(111) plane is no longer the only one to which the (2110) of IrSi3 is parallel. Instead precipitates are also observed oriented parallel to (111), (111), and (111) in Si in roughly equal numbers. Consequently, there are now 12 possible orientations of lrSi3 crystals. We assume that strain relief and interface area minimization are the main factors suppressing the additional orientations in the continuous lrSi3 films formed by the coalescence of precipitates at higher doses.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 185
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1. Wittmer, Marc, Phys. Rev. B42, 5249 (1990)CrossRefGoogle Scholar
2. Chu, J.J., Chen, L.J., Tu, K.N., J. Appl. Phys. 63, 1163 (1988)CrossRefGoogle Scholar
3. Lin, T.L., Nieh, C.W., Hashimoto, Shin, Xiao, Q.F., Thin Sol. Films 184, 343 (1990)CrossRefGoogle Scholar
4. Yu, K.M., Katz, B., Wu, I.C., Brown, I.G., Nucl. Instr. Meth. B58, 27 (1991)CrossRefGoogle Scholar
5. Short, K.T., White, Alice E., Eaglesham, D.J., Jacobson, D.C., Poate, J. M., Proc. Mat. Res. Soc. 235, 279 (1992)CrossRefGoogle Scholar
6. Sjoreen, T.P., Hinneberg, H.-J., Proc. Mat. Res. Soc. 279, 243 (1993)CrossRefGoogle Scholar
7. Sjoreen, T.P., Hinneberg, H.-J., These ProceedingsGoogle Scholar
8. White, J.G., Hockings, E.F., Inorg. Chem. 10, 1934 (1971)CrossRefGoogle Scholar
9. Finnie, L.N., J. Less-Common Metals, 4, 24 (1962)CrossRefGoogle Scholar
10. Engstrom, I., Zackrisson, F., Acta Chem. Scand., 24, 2109 (1970)CrossRefGoogle Scholar
11. Engstrom, I., Zdansky, E., Acta Chem. Scand., A36, 857 (1982)CrossRefGoogle Scholar