Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-29T10:30:19.915Z Has data issue: false hasContentIssue false
  • English
  • Français

Crosslinking and Ciiain-Scission of Photosensitive Polyimidesiloxane Under Deep UV Irradiation

Published online by Cambridge University Press:  25 February 2011

S. Jeng ,
M. Xu ,
H. S. Kwok ,
D. Y. Tang ,
H. R. Acharya  and
J. C. Rosenfeld
S. Jeng
Affiliation:
Department of Electrical and Computer Engineering, State University of New York at Buffalo, Bonner Hall, Buffalo, NY 14260
M. Xu
Affiliation:
Department of Electrical and Computer Engineering, State University of New York at Buffalo, Bonner Hall, Buffalo, NY 14260
H. S. Kwok
Affiliation:
Department of Electrical and Computer Engineering, State University of New York at Buffalo, Bonner Hall, Buffalo, NY 14260
D. Y. Tang
Affiliation:
Occidental Chemicals Corp., Grand Island, NY 14072
H. R. Acharya
Affiliation:
Occidental Chemicals Corp., Grand Island, NY 14072
J. C. Rosenfeld
Affiliation:
Occidental Chemicals Corp., Grand Island, NY 14072
Get access

Abstract

Polyimides are considered as promising packaging materials in multi-layer interconnections and multi-chip modules because of their low dielectric constant and good planarizability. Photosensitive polyimidesiloxane (SIM2000XL) as a newly emerging polyimide is showing not only similar properties as conventional polyimides but also the advantages of process simplification and improved adhesion. Moreover, it is proposed that SIM2000XL can be an oxygen-plasma etching barrier in multi-level lithographic systems because of its high silicon content.

We characterized the photosensitivity of SIM2000XL thin films under excimer laser (193 nm) exposure. The sensitivity of SIM2000XL was found to be about 20 mJ/cm2. After the SIM2000XL thin films were exposed through a photomask in the contact mode, development gave the usual negative patterns. However, the remained film thickness after exposure reached a maximum of about 65 % of the initial film thickness and decreased with further irradiation. This can be attributed to the competing processes of polymer crosslinkage and chain-scission. This phenomenon is important for applications of polymers in DUV lithography. A detailed study of these two competing processes are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 203: Symposium D – Electronic Packaging Materials Science V , 1990 , 261
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Rubner, R., Ahne, H., Kuhn, E. and Kolodziej, G., Photograph. Sci. Eng., 23, 303 (1979)Google Scholar
[2] Uekita, M., Awaji, H., Murata, M. and Mizunuma, S., Thin Solid Film, 180, 271 (1989)Google Scholar
[3] Lee, C. J., US Patent No. 4 953 452 (1989)Google Scholar
[4] Jeng, S., Xu, M., Liu, P. L., Kwok, H. S. and Lee, C.J., MRS 1989 Fall Meeting Symposium K3 (1989)Google Scholar