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A Critical Regime for AMorphization of Ion ImplantedSilicon

Published online by Cambridge University Press:  15 February 2011

R. D. Goldberg ,
J. S. Williams  and
R. G. Elliman
R. D. Goldberg
Affiliation:
Department of Electronic Materials Engineering, Australian National University, Canberra, 0200, Australia.
J. S. Williams
Affiliation:
Department of Electronic Materials Engineering, Australian National University, Canberra, 0200, Australia.
R. G. Elliman
Affiliation:
Department of Electronic Materials Engineering, Australian National University, Canberra, 0200, Australia.
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Abstract

A critical regime has been identified for ion implanted silicon where onlyslight changes in temperature can dramatically affect the levels of residualdamage. In this regime decreases of only 5° C aie sufficient to induce acrystalline-to-amorphous transformation in material which only exhibited thebuild-up of extended defects at higher temperatures. Traditional Models ofdamage accumulation and amorphization have proven inapplicable to thisregime which exists whenever dynamic defect annealing and damage productionare closely balanced. Irradiating ion flux, Mass and fluence have all beenshown to influence the temperature—which varies over a range of 300° C forion species ranging from C to Xe—at which the anomalous behaviour occurs.The influence of ion fluence suggests that complex defect accumulation playsan important role in amorphization. Results are presented which furthersuggest that the process is nucleation limited in this critical regime.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 417
Copyright
Copyright © Materials Research Society 1994

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References

[1] Dennis, J. R. and Hale, E. B., J. Appl. Phys. 49 (3), 1119 (1978).Google Scholar
[2] Gibbons, J. F., Proc. IEEE 60, 1062 (1972).Google Scholar
[3] Linnros, J., Elliman, R. G. and Brown, W. L., J. Mater. Res. 3 (6), 1208 (1988).Google Scholar
[4] Williams, J. S., Short, K. T., Elliman, R. G., Ridgway, M. C. and Goldberg, R., Nucl. Instr. and Meth. B 48, 431 (1990).Google Scholar
[5] Schultz, Peter J., Jagadish, C., Ridgway, M. C., Elliman, R. G. and Williams, J. S., Phys. Rev. B 44 (16), 9118 (1991).Google Scholar
[6] Written by Brown, R., Ph.D. student, The University of Melbourne, Melbourne, Australia.Google Scholar
[7] Ziegler, James F., J. Appl. Phys. 43 (7), 2973 (1972).Google Scholar
[8] Biersack, J. P. and Haggmark, L. G., Nucl. Inst. and Meth. 174, 257 (1980).Google Scholar
[9] Elliman, R. G., Linnros, J. and Brown, W. L., Mater. Res. Soc. Proc. 100, 363 (1988).Google Scholar
[10] Goldberg, R. D., Williams, J. S. and Elliman, R. G., to be published.Google Scholar
[11] Jackson, K. A., J. Mater. Res. 3 (6), 1218 (1988).Google Scholar
[12] Goldberg, R. D., Ph.D thesis, The University of Melbourne.Google Scholar