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Creation of In-Plane Anisotropic Strain in GaAs/A1xGa1−xAs Multiple Quantum Well Structures

Published online by Cambridge University Press:  22 February 2011

Y. Lu
Affiliation:
Rutgers University, Department of Electrical and Computer Engineering, Piscataway, New Jersey 08855-0909
H.C. Kuo
Affiliation:
Rutgers University, Department of Electrical and Computer Engineering, Piscataway, New Jersey 08855-0909
H. Shen
Affiliation:
U. S. Army Research Laboratory, Electronics and Power Sources Directorate AMSRL-EP-EF, Fort Monmouth, New Jersey 07703-5601
M. Taysing-Lara
Affiliation:
U. S. Army Research Laboratory, Electronics and Power Sources Directorate AMSRL-EP-EF, Fort Monmouth, New Jersey 07703-5601
M. Wraback
Affiliation:
U. S. Army Research Laboratory, Electronics and Power Sources Directorate AMSRL-EP-EF, Fort Monmouth, New Jersey 07703-5601
J. Pamulapati
Affiliation:
U. S. Army Research Laboratory, Electronics and Power Sources Directorate AMSRL-EP-EF, Fort Monmouth, New Jersey 07703-5601
M. Dutta
Affiliation:
U. S. Army Research Laboratory, Electronics and Power Sources Directorate AMSRL-EP-EF, Fort Monmouth, New Jersey 07703-5601
J. Kosinski
Affiliation:
U. S. Army Research Laboratory, Electronics and Power Sources Directorate AMSRL-EP-EF, Fort Monmouth, New Jersey 07703-5601
R. Sacks
Affiliation:
United Technologies Research Center, East Hartford, CT 06108
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Abstract

Thin film of GaAs/AlGaAs multiple quantum well (MQW) structure have been bonded to the lithium tantalate (LiTaO3) or calcium carbonate (CaCO3) substrates cut such that one of the linear thermal expansion coefficients almost matches that of the MQW while its orthogonal counterpart does not. By choosing the proper bonding and operating temperatures, in-plane anisotropic strain up to 0.3% has been achieved. The transmission spectrum shows an anisotropy in excitonic absorption which results in a polarization rotation of a light beam at normal incidence to the structure. The theoretical calculation is in agreement with the experimental results. Using the polarization rotation, we have demonstrated a novel MQW light modulator with an exceedingly high contrast ratio of 330:1.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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