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Correlations Among Degradations in Lead Zirconate Titanate thin Film Capacitors

Published online by Cambridge University Press:  21 February 2011

In K. Yoo ,
Seshu B. Desu  and
Jimmy Xing
In K. Yoo
Affiliation:
Virginia Polytechnic Institute and State University, Department of Materials Science and Engineering, Blacksburg, VA 24061
Seshu B. Desu
Affiliation:
Virginia Polytechnic Institute and State University, Department of Materials Science and Engineering, Blacksburg, VA 24061
Jimmy Xing
Affiliation:
Virginia Polytechnic Institute and State University, Department of Materials Science and Engineering, Blacksburg, VA 24061
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Abstract

Many attempts have been made to reduce degradation properties of Lead Zirconate Titanate (PZT) thin film capacitors. Although each degradation property has been studied extensively for the sake of material improvement, it is desired that they be understood in a unified manner in order to reduce degradation properties simultaneously. This can be achieved if a common source(s) of degradations is identified and controlled. In the past it was noticed that oxygen vacancies play a key role in fatigue, leakage current, and electrical degradation/breakdown of PZT films. It is now known that space charges (oxygen vacancies, mainly) affect ageing, too. Therefore, a quantitative ageing mechanism is proposed based on oxygen vacancy migration under internal field generated by either remanent polarization or spontaneous polarization. Fatigue, leakage current, electrical degradation, and polarization reversal mechanisms are correlated with the ageing mechanism in order to establish guidelines for simultaneous degradation control of PZT thin film capacitors. In addition, the current pitfalls in the ferroelectric test circuit is discussed, which may cause false retention, imprint, and ageing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 310: Symposium N – Ferroelectric Thin Films III , 1993 , 165
Copyright
Copyright © Materials Research Society 1993

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