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Correlation Between Electrical-Optical and Structural Properties of Microcrystalline Silicon N Type Films

Published online by Cambridge University Press:  10 February 2011

R. Martins
Affiliation:
Materials Science Department of Faculty of Science and Technology of New University of Lisbon and CEMOP-UNINOVA, Quinta da Torre, P-2825 Monte de Caparica, Portugal
A. Macarico
Affiliation:
Materials Science Department of Faculty of Science and Technology of New University of Lisbon and CEMOP-UNINOVA, Quinta da Torre, P-2825 Monte de Caparica, Portugal
I. Ferreira
Affiliation:
Materials Science Department of Faculty of Science and Technology of New University of Lisbon and CEMOP-UNINOVA, Quinta da Torre, P-2825 Monte de Caparica, Portugal
R. Nunes
Affiliation:
Materials Science Department of Faculty of Science and Technology of New University of Lisbon and CEMOP-UNINOVA, Quinta da Torre, P-2825 Monte de Caparica, Portugal
A. Bicho
Affiliation:
Materials Science Department of Faculty of Science and Technology of New University of Lisbon and CEMOP-UNINOVA, Quinta da Torre, P-2825 Monte de Caparica, Portugal
E. Fortunato
Affiliation:
Materials Science Department of Faculty of Science and Technology of New University of Lisbon and CEMOP-UNINOVA, Quinta da Torre, P-2825 Monte de Caparica, Portugal
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Abstract

Wide band gap microcrystalline silicon films have aroused considerable interest since they combine some electro-optical advantages of amorphous and crystalline materials highly important to produce electro-optical devices such as TFTs and solar cells. In this paper we present results concerning the electro-optical characteristics of highly transparent and conductive n-type µc-Si based films. Here, emphasis is given to the production of n-type ýtc-films with optical gaps of 2.3 eV and dark conductivity's of 6.5 Scm-1

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

1. He, S.S, Williams, M. J., Stephens, D. J. and Lucovsky, G., J. Non-Cryst. Sol. 164 & 166, 731 (1993).Google Scholar
2. Matsuyama, T., Nishikuni, M., Kameda, M., Okamoto, S., Tanaka, M., Tsuda, S, Ohnishi, M., Nakano, S. and Kuwano, Y., Mat. Res. Soc. Symp. Proc. 164, 329 (1990).Google Scholar
3. évillon, B., Solomon, I. and Fang, M., Mat. Res. Soc. Symp. Proc. 283, 455 (1993).Google Scholar
4. Martins, R., Willeke, G, Fortunato, E., Ferreira, I., Vieira, M., Santos, M., Maqarico, A. and Guimarães, L., J. Non-Cryst. Sol. 114, 486 (1989).Google Scholar
5. Martins, R., Vieira, M., Ferreira, I. and Fortunato, E., Mat. Res. Soc. Syrmp. Proc. 358, 915 (1994).Google Scholar
6. Willeke, G.: In Amorphous & Microcystalline Semiconductor Devices-Materials and Device Physics vol. II, ed. by Kanicki, J. (Artech House, London, 1992) p. 55.Google Scholar
7. Brogueira, P., Chu, V. and Conde, J. P., Mat. Res. Soc. Symp. Proc. 377, 57 (1995).Google Scholar
8. Martins, R., Vieira, M., Ferreira, I. and Fortunato, E., J. Vac. Sci. Technol. 13, 2199 (1995).Google Scholar
9. Jones, S. J., Chen, Y., Williamson, D. L., Kroll, U, Roca, P. and Cabarrocas, , J. Non-Cryst. Sol. 164–166, 131 (1993).Google Scholar
10. Martins, R., Ferreira, I. and Fortunato, E.: In Solid State Phenomena vols 44 & 46, ed. by Scitec Publications (Switzerland, 1995) p. 299.Google Scholar
11. Otobe, M. and Oda, S., J. Non-Cryst. Sol. 164 & 166, 993 (1993).Google Scholar
12. Solomon, I., Drdvillon, B., Shirai, H. and Layadi, N., J. Non-Cryst. Sol. 164 & 166, 989 (1993).Google Scholar
13. Martins, R., Vieira, M., Ferreira, I., Fortunato, E. and Guimardes, L., Solar Energy Materials & Solar cells, (in print).Google Scholar
14. Fortunato, E., Ph.D. Thesis, FCT-UNL, Portugal, 1995.Google Scholar