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Correlation Between Electrical-Optical and Structural Properties of Microcrystalline Silicon N Type Films
Published online by Cambridge University Press: 10 February 2011
Abstract
Wide band gap microcrystalline silicon films have aroused considerable interest since they combine some electro-optical advantages of amorphous and crystalline materials highly important to produce electro-optical devices such as TFTs and solar cells. In this paper we present results concerning the electro-optical characteristics of highly transparent and conductive n-type µc-Si based films. Here, emphasis is given to the production of n-type ýtc-films with optical gaps of 2.3 eV and dark conductivity's of 6.5 Scm-1
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