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Conservation of Lateral Momentum in Heterostructure Integrated Thermionic Coolers

Published online by Cambridge University Press:  21 March 2011

Daryoosh Vashaee
Affiliation:
Jack Baskin School of Engineering University of California Santa Cruz, CA 95064
Ali Shakouri
Affiliation:
Jack Baskin School of Engineering University of California Santa Cruz, CA 95064
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Abstract

Thin film thermionic coolers use selective emission of hot electrons over a heterostructure barrier layer from emitter to collector resulting in evaporative cooling. In this paper a detailed theory of electron transport perpendicular to the multilayer superlattice structures is presented. Using Fermi-Dirac statistics, density-of-states for a finite quantum well and the quantum mechanical reflection coefficient, the currentvoltage characteristics and the cooling power density are calculated. The resulting equations are valid in a wide range of temperatures and electric fields. It is shown that conservation of lateral momentum plays an important role in the device characteristics. If the lateral momentum of the hot electrons is conserved in the thermionic emission process, only carriers with sufficiently large kinetic energy perpendicular to the barrier can pass over it and cool the emitter junction. However, if there is no conservation of lateral momentum, the number of electrons participating in thermionic emission will dramatically increase. The theoretical calculations are compared with the experimental dark current characteristics of quantum well infrared photodetectors and good agreement over a wide temperature range is obtained. Calculations for InGaAs/InGaAsP superlattice structures show that the effective thermoelectric power factor (electrical conductivity times the square of the effective Seebeck coefficient) can be improved comparing to that of bulk material. We will also discuss methods by which the conservation of lateral momentum in thermionic emission process can be altered such as by creating a controlled roughness at the interface of the superlattice barriers. The improvement in the effective power factor through thermionic emission can be combined with the other methods to reduce the phonon thermal conductivity in superlattices and thus obtain higher thermoelectric figure-of-merit ZT.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

REFERENCES

[1] Shakouri, A. and Bowers, J.E., 1997, “Heterostructure Integrated Thermionic Coolers,” Applied Physics Letters, 71, pp. 12341236.Google Scholar
[2] Shakouri, A., Lee, E.Y., Smith, D.L., Narayanamurti, V., and Bowers, J., E., , 1998, “Thermoelectric Effects in Submicron Heterostructure Barriers,” Microscale Thermophysical Eng., 2, pp. 3742.Google Scholar
[3] Shakouri, A., LaBounty, C., Piprek, J., Abraham, P., and Bowers, J.E., 1999, “Thermionic Emission Cooling in Single Barrier Heterostructures,” Applied Physics Letters, 74, pp. 8889.Google Scholar
[4] Shakouri, A., Labounty, C., Abraham, P., Piprek, J., and Bowers, J.E., 1998, “Enhanced Thermionic Emission Cooling in High Barrier Superlattice Heterostructures”, Material Research Society Symposium Proceedings, Vol. 545, pp.449458.Google Scholar
[5] Zeng, G.H., Shakouri, A., La Bounty, C., Robinson, G., Croke, E., Abraham, P., Fan, X.F., Reese, H., and Bowers, J.E., 1999, “SiGe Micro-Cooler,” Electronics Letters, 35, 21462147.Google Scholar
[6] Fan, X.F., Zeng, G.H., LaBounty, C., Bowers, J.E., Croke, E., Ahn, C.C., Huxtable, S., Majumdar, A., and Shakouri, A., 2001, “SiGeC/Si Superlattice Microcoolers,” Applied Physics Letters, 78, 15801582.Google Scholar
[7] Fan, X.F., Zeng, G., Croke, E., LaBounty, C., Ahn, C.C., Vashaee, D., Shakouri, A., and Bowers, J., E., , 2001, “High Cooling Power Density SiGe/Si Micro-coolers,” Electronics Letters, 37, pp. 126127.Google Scholar
[8] LaBounty, C., Shakouri, A., Abraham, P., Bowers, J.E., 2000, “Monolithic Integration of Thin-Film Coolers with Optoelectronic Devices,” Optical Engineering, 39, pp. 28472852.Google Scholar
[9] LaBounty, C; Shakouri, A; Bowers, JE., 2001, “Design and characterization of thin film microcoolers,” J. Applied Physics, 89, pp. 40594064.Google Scholar
[10] Whitlow, L.W. and Hirano, T., 1995, “Superlttice Application to Thermoelectricity,” J. Applied Physics, 78, pp. 54605466.Google Scholar
[11] Mahan, G.D. and Woods, L.M., 1998, “Multilayer Thermionic Refrigeration,” Physical Review Letters, 80, pp. 40164019 (1998).Google Scholar
[12] Moyzhes, B. and Nemchinsky, V., 1998, “Thermoelectric Figure of Merit of Metal-Semiconductor Barrier Structure based on Energy Relaxation Length,” Applied Physics Letters, 73, pp.18951897.Google Scholar
[13] Vining, C. B. and Mahan, G. D., Journal of Applied Physics 86, 6852–3 (1999).Google Scholar
[14] Ulrich, M.D.; Barnes, P.A.; Vining, C.B. Comparison of solid-state thermionic refrigeration with thermoelectric refrigeration. Journal of Applied Physics, vol.90, (no.3) 2001. p.1625–31.Google Scholar
[15] Radtke, R.J., Ehrenreich, H., and Grein, C.H., 1999, “Multilayer Thermoelectric Refrigeration in Hg1−xCdxTe Superlattices,” J. Applied Physics, 86, pp. 31953198.Google Scholar
[16] Zeng, T.F. and Chen, G., 2000, “Energy Conversion in Heterostructures for Thermionic Cooling,” Microscale Thermophysical Engineering, 4, pp. 3950.Google Scholar
[17] Harman, T.C., Taylor, P.J., Spears, D.L., and Walsh, M.P., 2000, “Thermoelectric Quantum-Dot Superlattices with High ZT,” J. Electronic Materials, 29, pp. L1–L4.Google Scholar
[18] Chen, G., 2001, “Phonon Transport in Low-Dimensional StructuresSemiconductors and Semimetals, 71, pp. 203259.Google Scholar
[19] Venkatasubramanian, R., 2001, “Phonon Blocking Electron Transmitting Superlattice Structures as Advanced Thin Film Thermoelectric Materials,” Semiconductors and Semimetals, 71, pp. 175201.Google Scholar
[20] Venkatasubramanian, R., Siivola, E., Colpitts, T., and O'Quinn, B., Nature 413, 597602 (2001).Google Scholar
[21] Meshkov, S.V., Sov. Phys. JETP 64 (6), December 1986 Google Scholar
[22] Levine, B.F., Bethea, C.G., Hanian, G., Shen, V.O., Pelve, E., Abbott, R.R., and Hsieh, S.J., Appl. Phys. Lett. 56(9), 26 February 1990 Google Scholar
[23] Pevle, E.', Beltram, F., Bethea, C.G., Levine, B F., Shen, V.O., Hsieh, S.J., and Abboth, R.R., J. Appl. Phys, 66(11), 1 December 1989 Google Scholar
[24] Kukushkin, I. V. and Timofeev, V.B., Pis'ma Zh. Eksp. Teo. Fiz. 40, 413 (1984) [JETP Lett. 40, 1231 (1984)]Google Scholar
[25] Kulakoviskii, V. D., Shepel, B. N.', Denisov, A. A., and Senichkin, A. P., Fiz. Tekh. Poluprovodn. 21, (1987) [sic].Google Scholar