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Comparison of the GaAs Layers Grown on Porous Si and on Si by Molecular Beam Epitaxy

Published online by Cambridge University Press:  28 February 2011

B.J. Wu ,
K.L. Wang ,
Y.J. Mii ,
Y.S. Yoon ,
A.T. Wu ,
T. George  and
E. Weber
B.J. Wu
Affiliation:
Device Research Laboratory, Electrical Engineering Department, University of California, Los Angeles, CA 90024
K.L. Wang
Affiliation:
Device Research Laboratory, Electrical Engineering Department, University of California, Los Angeles, CA 90024
Y.J. Mii
Affiliation:
Device Research Laboratory, Electrical Engineering Department, University of California, Los Angeles, CA 90024
Y.S. Yoon
Affiliation:
Device Research Laboratory, Electrical Engineering Department, University of California, Los Angeles, CA 90024
A.T. Wu
Affiliation:
Intel Corporation, Component Research, SC9-45, 2250 Mission College Blvd., Santa Clara, CA 95052
T. George
Affiliation:
Material Science & Mineral Engineering Department, University of California, Berkeley, CA 94720
E. Weber
Affiliation:
Material Science & Mineral Engineering Department, University of California, Berkeley, CA 94720
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Abstract

GaAs layers have been successfully grown on tilted (100) Si as well as porous Si substrates by molecular beam epitaxy(MBE). Rapid thermal annealing and vacuum thermal annealing have been used to further improve the quality of the epitaxial layers. We observed that the dislocation density near the interface of the heterostructure is higher for GaAs on Si substrate. Both annealing processes are proven to be useful in improving layer quality, while the vacuum thermal annealing seemed to be more effective in minimizing the residual stress.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 343
Copyright
Copyright © Materials Research Society 1989

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