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Comparison of Isothermal Anneal Techniques for be or Si Implanted S.I. InP

Published online by Cambridge University Press:  26 February 2011

B. Molnar  and
H. B. Dietrich
B. Molnar
Affiliation:
Naval Research Laboratory Washington, D.C. 20375
H. B. Dietrich
Affiliation:
Naval Research Laboratory Washington, D.C. 20375
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Abstract

This paper presents a study of the annealing of Be and Si implants into InP. It compares rapid thermal anneal (RTA) and furnace anneal (FA) techniques over a temperature range of 600-;900° C. The results demonstrate that RTA results in activation and mobilities as good as those obtained by FA for both Si and Be implant. The background Fe concentration of S.I. InP substrates lead to substantial differences in activation. Arrhenius fit of optimal activation data of Si indicates an activation energy of 1.8 eV. The Si implants display no redistribution during either type of annealing, while the Be implants display more than one type of redistribution. Moreover, the complete description of the Be redistribution requires the knowledge of both the atomic and the electronic profiles. Capless annealing eliminates the additional processing steps of capping but it also sets a limit on the maximum temperature and time of the annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 423
Copyright
Copyright © Materials Research Society 1986

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