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Comparison of Epitaxial Graphene on Si-face and C-face 6H-SiC

Published online by Cambridge University Press:  23 March 2011

Shin Mou ,
J. J. Boeckl ,
L. Grazulis ,
B. Claflin ,
Weijie Lu ,
J. H. Park  and
W. C. Mitchel
Shin Mou
Affiliation:
Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, OH 45433, USA
J. J. Boeckl
Affiliation:
Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, OH 45433, USA
L. Grazulis
Affiliation:
Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, OH 45433, USA
B. Claflin
Affiliation:
Wright State University, Semiconductor Research Center, Dayton, OH 45435, USA
Weijie Lu
Affiliation:
Fisk University, Department of Chemistry, Nashville, TN 37208, USA
J. H. Park
Affiliation:
Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, OH 45433, USA
W. C. Mitchel
Affiliation:
Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, OH 45433, USA
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Abstract

We present atomic force microscopy (AFM), Hall-effect measurement, and Raman spectroscopy results from graphene films on 6H-SiC (0001) and (000-1) faces (Si-face and C-face, respectively) produced by radiative heating in a high vacuum furnace chamber through thermal decomposition. We observe that the formation of graphene on the two faces of SiC is different in terms of the surface morphology, graphene thickness, Hall mobility, and Raman spectra. In general, graphene films on the SiC C-face are thicker with higher mobilities than those grown on the Si-face.

Keywords

Hall effectRaman spectroscopyannealing
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1284: Symposium C – Fundamentals of Low-Dimensional Carbon Nanomaterials , 2011 , mrsf10-1284-c03-40
Copyright
Copyright © Materials Research Society 2011

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References

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