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A Comparative Study of Defect States in Light-Soaked and High-Temperature-Annealed a-Si:H

Published online by Cambridge University Press:  01 January 1993

Z. M. Saleh ,
H. Tarui ,
S. Tsuda ,
S. Nakano  and
Y. Kuwano
Z. M. Saleh
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd., 1-18-13 Hashiridani, Hirakata, Osaka 573 Japan
H. Tarui
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
S. Tsuda
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
S. Nakano
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
Y. Kuwano
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
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Abstract

Our previous results of light-induced electron spin resonance (LESR) indicate that, in hydrogenated amorphous silicon (a-Si:H), light-induced defects differ from those formed during deposition or high-temperature annealing. A plausible interpretation, in which light-induced defects occupy higher-energy states, was proposed to explain these differences. In this study, the constant photocurrent method (CPM), dark conductivity and steady-state (SS) LESR are used to supply new evidence for the difference and conduct two important tests on our hypothesis. In striking agreement with our predictions, we find that the light-induced changes in the SS-LESR lineshape (a decrease in the narrow component relative to the broad one upon light exposure) become indeed more dramatic as the demarcation energies move closer to the midgap by increasing temperature or decreasing bias-light intensity for SS-LESR.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 601
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Stutzmann, M., Jackson, W.B. and Tsai, C.C., Phys. Rev. B32, 23 (1985).Google Scholar
2. Yoshida, M. and Morigaki, K., J. Phys. Soc. Jpn. 59, 1733 (1990).Google Scholar
3. Han, D. and Fritzsche, H., J. Non-Cryst. Solids 59&60, 397 (1983).Google Scholar
4. Gunes, M. and Wronski, C.R., Appl. Phys. Lett. 61, 678 (1992).Google Scholar
5. Saleh, Z.M., Tarui, H., Nakamura, N., Nishikuni, M., Tsuda, S., Nakano, S. and Kuwano, Y., Jpn. J. Appl. Phys. 12, 3801 (1992).Google Scholar
6. Street, R.A. and Biegelson, D.K., J. Non-Cryst. Solids 35&36, 651(1980).Google Scholar
7. Crandall, R.S., Semiconductors and Semimetals. edited by Pankove, J.I. (Academic, New York, 1984) Vol 21B, p. 245.Google Scholar
8. Simmons, J.G. and Taylor, G.W., Phys. Rev. B4, 502(1971).Google Scholar
9. Bube, R.H., Benatar, Lisa, Grimbergen, M.N. and Redfield, D., J. Appl. Physics 72, 5766 (1992).Google Scholar