Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-19T12:22:56.919Z Has data issue: false hasContentIssue false
  • English
  • Français

Chemical Vapor Deposition and Properties of Amorphous Aluminum Oxide Films

Published online by Cambridge University Press:  10 February 2011

Roy G. Gordon ,
Keith Kramer  and
Xinye Liu
Roy G. Gordon
Affiliation:
Department of Chemistry, Harvard University, Cambridge, MA 02138
Keith Kramer
Affiliation:
Department of Chemistry, Harvard University, Cambridge, MA 02138
Xinye Liu
Affiliation:
Department of Chemistry, Harvard University, Cambridge, MA 02138
Get access

Abstract

Films of amorphous aluminum oxide were deposited from vaporized alkylaluminum alkoxide compounds and oxygen. For example, a gaseous mixture of triethyldialuminum tri-sec-butoxide vapor and dry air deposits amorphous aluminum oxide films on substrates heated to temperatures around 400 °C. Transparent, smooth, adherent films of aluminum oxide were formed on silicon, glass and metal substrates. The new precursors display a number of advantages over previously used sources for aluminum oxide. They are non-pyrophoric, low-viscosity, low-cost liquids. High deposition rates, over 0.2 μm/min, were observed. The coatings have high purity, high electrical resistivity and high transparency to light. They are excellent barriers to diffusion of water and of ions, such as sodium. These films are useful in optical coatings, as wear-resistant hard coatings, and as diffusion barriers that protect flat panel displays, computer microcircuits, solar cells and metals from corrosion and degradation by impurities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 446: Amorphous and Crystalline Insulating Thin Films–1996 , 1996 , 383
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Tombs, N. C., Wegener, H. A., Newman, R., Kenney, B. T. and Coppola, A. J., Proc. IEEE 54, 87 (1966).Google Scholar
2 Munro, P. C. and Thompson, H. W., Jr., J. Electrochem. Soc. 122, 127 (1975).Google Scholar
3 Kawabe, T., Fuyama, M. and Narshige, S., J. Electrochem. Soc. 138, 2744 (1991).Google Scholar
4 Lux, B., Colombier, C. and Altena, H., Thin Solid Films 138, 49 (1986); J. N. Lindstrom and R. T. Johannesson, J. Electrochem. Soc. 123, 555 (1976).Google Scholar
5 van Corbach, H. D., Haanappel, V. A. C., Fransen, T. and Gellings, P. J., in Ceramic Films and Coatings, edited by Lee, W. E. (The Institute of Materials, London, 1995), p. 41.Google Scholar
6 Gustin, K. M. and Gordon, R. G., J. Electronic Materials, 17, 509–517 (1988).Google Scholar
7 Gordon, R. G., U. S. Patent No. 4 187 336 (5 February 1980).Google Scholar
8 Aboaf, J. A., J. Electrochem. Soc., 114, 948–952 (1967).Google Scholar
9 Maruyama, T. and Nakai, T., Appl. Phys. Lett., 58, 2079–2080 (1991).Google Scholar