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Chemical Solution Processing of Strontium Bismuth Tantalate Films

Published online by Cambridge University Press:  10 February 2011

C.D.E. Lakeman  and
T. J. Boyle
C.D.E. Lakeman
Affiliation:
Texas Instruments, Inc., P.O. Box 655012, Mail Stop 921, Dallas TX 75265 (Current Address TPL Inc., 3921 Academy Parkway North, NE, Albuquerque, NM 87109)
T. J. Boyle
Affiliation:
Sandia National Laboratories, Advanced Materials Laboratory, 1001 University Blvd., SE, Albuquerque, NM 87106
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Abstract

We describe Chemical Solution Deposition (CSD) processes by which Strontium Bismuth Tantalate (SBT) thin films can be prepared at temperatures as low as 550°C. In this paper, we will present strategies used to optimize the properties of the films including solution chemistry, film composition, the nature of the substrate (or bottom electrode) used, and the thermal processing cycle. Under suitable conditions, ∼1700 Å films can be prepared which have a large switchable polarization (2Pr >10μC/cm2), and an operating voltage, defined as the voltage at which 0.80 × 2Prmax is switched, 2.OV. We also describe an all-alkoxide route to SBT films from which SBT can be crystallized at 550°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 259
Copyright
Copyright © Materials Research Society 1999

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References

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