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Chemical Oxide Passivation for Very Thin Oxide Formation

Published online by Cambridge University Press:  21 February 2011

J. Takano ,
K. Makihara  and
T. Ohmi
J. Takano
Affiliation:
Department of Electronic Engineering, Faculty of Engineering, Tohoku University, Sendai 980, Japan Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980, Japan.
K. Makihara
Affiliation:
Department of Electronic Engineering, Faculty of Engineering, Tohoku University, Sendai 980, Japan Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980, Japan.
T. Ohmi
Affiliation:
Department of Electronic Engineering, Faculty of Engineering, Tohoku University, Sendai 980, Japan
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Abstract

Electrical characteristics of the very thin oxides including oxide films formed in various chemicals were evaluated by means of the ultraclean oxidation system. The very thin oxides including the oxide films formed in H2SO4/H2O2, O3/H2O, and Hot-H2O22 have been found superior terms of reliability to those including the oxide films formed in NH4OH/H2O2/H2O and HCI/H2O2/H2O. The oxide films formed in H2SO4/H2O2, O3/H2O, and Hot–H2O2 have been found to function as the controlled passivation films which suppress increase of surface microroughness when heating of the wafer to thermal oxidation temperature in the inert gas ambience.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 315: Symposium Y – Surface Chemical Cleaning and Passivation for Semiconductor Processing , 1993 , 381
Copyright
Copyright © Materials Research Society 1993

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References

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