Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-25T17:32:32.635Z Has data issue: false hasContentIssue false
  • English
  • Français

Chemical Metal Deposition on Insulators by An Ion-Beam Process

Published online by Cambridge University Press:  25 February 2011

Svend Stensig Eskildsen  and
Gunnar SØrensen
Svend Stensig Eskildsen
Affiliation:
Institute of Physics, University of Aarhus, DK-8000 Aarhus C, Denmark
Gunnar SØrensen
Affiliation:
Institute of Physics, University of Aarhus, DK-8000 Aarhus C, Denmark
Get access

Abstract

An ion-induced decomposition of thin metal-compound films on insulating surfaces is described. 100-keV ion beams of Ar+, Kr+, and Xe+ was used to decompose thin (~10 nm) films of a palladium compound on polyimide and alumina. Changes in the stoichiometry have been observed with Rutherford Backscattering Spectrometry. The compound was also decomposed in a pattern using a mask, and the nondecomposed film could easily be removed with a suitable solvent. The decomposed palladium compound was used as a catalyst for a direct, electroless metal deposition of Cu. The plating speed was 30 nm/min, and a 4-5 µQcm copper film could be obtained after 3-4 min plating. Plated metal patterns are demonstrated on both polyimide and alumina, with a resolution in the µm range. On polyimide plating of a three-dimensional structure has been demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 45: Symposium A – Ion Beam Processes in Advanced Electronic Materials and Device Technology , 1985 , 253
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ford, D., Circuits Manufactoring, Dec. 1984, p. 36.Google Scholar
2. Eskildsen, S.S. and Sorensen, G., in Surface Engineerino, edited by Kossowsky, R. and Singhal, S.C. (Nijhoff, The Hague, 1984), pp. 48–60.CrossRefGoogle Scholar
3. Eskildsen, S.S., in Ion Implantation into Metals, edited by Ashworth, V., Grant, W.A., and Procter, R.P.M. (Pergamon, Oxford, 1982), pp. 315–327.Google Scholar
4. Eskildsen, S.S. and Sorensen, G., Nucl. Instrum. Methods B1 (1985)Google Scholar
5. Biersack, J.P. and Ziegler, J.F., in Ion Implantation Techniuues, edited by Ryssel, H. and Glawischnig, H. (Springer, Berlin, 1982), pp. 157–176.CrossRefGoogle Scholar
6. Andersen, H.H. and Bay, H.L., in Sputtering by Particle Bombardment I, edited by Behrisch, R. (Springer, Berlin, 1981), p. 179.Google Scholar
7. Eskildsen, S.S. and Sorensen, G., Appl. Phys. Lett., Accepted.Google Scholar