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Charged Excitons in Self-assembled Quantum Dots

Published online by Cambridge University Press:  11 February 2011

R. J. Warburton ,
B. Urbaszek ,
E. J. McGhee ,
C. Schulhauser ,
A. Högele ,
K. Karrai ,
A. O. Govorov ,
J. M. Garcia ,
B. D. Gerardot  and
P. M. Petroff
R. J. Warburton
Affiliation:
Department of Physics, Heriot-Watt University, Edinburgh, UK
B. Urbaszek
Affiliation:
Department of Physics, Heriot-Watt University, Edinburgh, UK
E. J. McGhee
Affiliation:
Department of Physics, Heriot-Watt University, Edinburgh, UK
C. Schulhauser
Affiliation:
Sektion Physik, Ludwig-Maximilians-Universität, Munich, Germany
A. Högele
Affiliation:
Sektion Physik, Ludwig-Maximilians-Universität, Munich, Germany
K. Karrai
Affiliation:
Sektion Physik, Ludwig-Maximilians-Universität, Munich, Germany
A. O. Govorov
Affiliation:
Department of Physics and Astronomy, Ohio University, Athens, USA Institute of Semiconductor Physics, 630090 Novosibirsk, Russia
J. M. Garcia
Affiliation:
Instituto de Microelectrónica, Madrid, Spain
B. D. Gerardot
Affiliation:
Materials Department, University of California, Santa Barbara, USA
P. M. Petroff
Affiliation:
Materials Department, University of California, Santa Barbara, USA
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Abstract

We have succeeded in generating highly charged excitons in InAs self-assembled quantum dots by embedding the dots in a field-effect heterostructure. We discover an excitonic Coulomb blockage: over large regions of gate voltage, the exciton charge remains constant. We present here a summary of the emission properties of the charged excitons.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , E12
Copyright
Copyright © Materials Research Society 2003

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References

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