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Characterization of Ultra-Fast Phase Change Optical Disk with GaSb Material
Published online by Cambridge University Press: 01 February 2011
Abstract
We studied the crystallization mechanism of ultra-fast phase change optical disks with recording layers made of GaSb material for digital versatile disk (DVD) systems. The results of a static recording test and an amorphous mark formation simulation suggest that GaSb maintains a high crystal growth rate even at temperatures 150 degrees lower than the material's melting point. Disks with recording layers made of this material have a write speed margin ranging from DVD 3× to 8× or more.
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- Copyright © Materials Research Society 2004
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