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Characterization of TiN Diffusion Barrier for Submicron Technology
Published online by Cambridge University Press: 25 February 2011
Abstract
The electrical properties and structure of reactively sputtered titanium nitride barrier metal films have been characterized. Junction leakages and yields for different post deposition treatments of the barrier metal layer are reported. TEM, x-ray diffraction and Auger electron spectroscopy have been used for the physical characterization of the TiN films.
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- Copyright © Materials Research Society 1992
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