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Characterization of The Nucleation and Growth Process of CVD-W On TiN Substrates

Published online by Cambridge University Press:  15 February 2011

Arun K. Nanda ,
Sailesh M. Merchant  and
Pradip K. Roy
Arun K. Nanda
Affiliation:
AT&T assignee, SEMATECH, Austin, TX 78741
Sailesh M. Merchant
Affiliation:
AT&T Bell Laboratories, 9333 South John Young Parkway, Orlando, FL 32819
Pradip K. Roy
Affiliation:
AT&T Bell Laboratories, 9333 South John Young Parkway, Orlando, FL 32819
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Abstract

The nucleation and growth characteristics of CVD-W on Ti/TiN barrier layers with SiH4 and H2 reduction chemistries are presented. In particular, the reaction between WF6 (precursor used for depositing W) and the underlying Ti of the barrier stack was studied to better understand the chemistry of ‘volcano’ formation - a phenomena that causes severe defects in the deposited W film. Ti/TiN processing parameters and stack thicknesses were varied, along with the CVD-W deposition chemistry (gas flows, pressures, temperatures and times), to evaluate film properties and characteristics after SiH4 passivation, nucleation and full W plug deposition. The analysis was augmented with cross-sectional Scanning Electron Microscopy (SEM) on short-loop testers and films were characterized using Rutherford Backscattering Spectroscopy (RBS), Secondary Ion Mass Spectroscopy (SIMS), X-ray Diffraction (XRD) and Auger Electron Spectroscopy (AES) techniques. Several processing conditions are recommended for ‘volcano-free’ and ‘defect-free’ CVD-W films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 382: Symposium G – Structure and Properties of Multilayered Thin Films , 1995 , 401
Copyright
Copyright © Materials Research Society 1995

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References

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